FSB660 Specs and Replacement
Type Designator: FSB660
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
FSB660 Substitution
- BJT ⓘ Cross-Reference Search
FSB660 datasheet
FSB660 / FSB660A C E B SuperSOTTM-3 (SOT-23) PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* T A = 25 C unless otherwise noted Symbol Parameter FSB660/FSB660A Units 60 V VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 5 V VEBO ... See More ⇒
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Detailed specifications: FPN630A, FPN660, FPN660A, FPNH10, FSB560, FSB560A, FSB619, FSB649, BD136, FSB660A, FSB6726, FSB749, FSBCW30, FTM3725, FZT3019, KSA1015, KSA1203
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