KST5551 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KST5551

Código: G1

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 160 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT-23

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KST5551 datasheet

 ..1. Size:44K  fairchild semi
kst5551.pdf pdf_icon

KST5551

KST5551 Amplifier Transistor Collector-Emitter Voltage VCEO=160V 3 Collector Power Dissipation PC (max)=350mW 2 SOT-23 1 Mark G1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base

 8.1. Size:56K  fairchild semi
kst5550.pdf pdf_icon

KST5551

KST5550 High Voltage Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 350 mW TSTG Storage Tempe

 9.1. Size:44K  fairchild semi
kst55 kst56.pdf pdf_icon

KST5551

KST55/56 Driver Transistor Collector-Emitter Voltage VCEO = KST55 - 60V 3 KST56 - 80V Collector Power Dissipation PC (max) = 350mW Complement to KST05/06 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector Base Voltage KST55 -60 V K

 9.2. Size:21K  samsung
kst55.pdf pdf_icon

KST5551

KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Base Voltage VCBO KST55 -60 V KST56 -80 V Collector-Emitter Voltage VCEO KST55 -60 V KST56 -80 V Emitter-Base Voltage VEBO -4 V Collector Current IC -500 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 Therma

Otros transistores... KSC2883, KSC5019, KSC5042F, KSP5179, KSP94, KST3906, KST4125, KST5401, A1015, MAT02, MMBT2222AK, PN2369A, MMBT2369A, MMBT2907AK, MMBT3702, MMBT3904K, MMBT3906K