All Transistors. KST5551 Datasheet

 

KST5551 Datasheet, Equivalent, Cross Reference Search


   Type Designator: KST5551
   SMD Transistor Code: G1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT-23

 KST5551 Transistor Equivalent Substitute - Cross-Reference Search

   

KST5551 Datasheet (PDF)

 ..1. Size:44K  fairchild semi
kst5551.pdf

KST5551 KST5551

KST5551Amplifier Transistor Collector-Emitter Voltage: VCEO=160V 3 Collector Power Dissipation: PC (max)=350mW2SOT-231Mark: G11. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 VVCEO Collector-Emitter Voltage 160 VVEBO Emitter-Base

 8.1. Size:56K  fairchild semi
kst5550.pdf

KST5551 KST5551

KST5550High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 160 VVCEO Collector-Emitter Voltage 140 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Power Dissipation 350 mWTSTG Storage Tempe

 9.1. Size:44K  fairchild semi
kst55 kst56.pdf

KST5551 KST5551

KST55/56Driver Transistor Collector-Emitter Voltage: VCEO = KST55: - 60V3KST56: - 80V Collector Power Dissipation: PC (max) = 350mW Complement to KST05/06 2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector Base Voltage : KST55 -60 V: K

 9.2. Size:21K  samsung
kst55.pdf

KST5551

KST55/56 PNP EPITAXIAL SILICON TRANSISTORDRIVER TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Base Voltage VCBO :KST55 -60 V :KST56 -80 VCollector-Emitter Voltage VCEO :KST55 -60 V :KST56 -80 VEmitter-Base Voltage VEBO -4 VCollector Current IC -500 mACollector Dissipation PC 350 mWStorage Temperature TSTG 150 Therma

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SA100

 

 
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