NZT560 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NZT560

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 75 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-223

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NZT560 datasheet

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 nzt560.pdf pdf_icon

NZT560

NZT560/NZT560A NPN Low Saturation Transistor 4 These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA=25 C unless otherwise noted Symbol Parameter NZT560/NZT560A Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 80 V

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NZT560

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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 nzt560-a.pdf pdf_icon

NZT560

May 2009 NZT560/NZT560A NPN Low Saturation Transistor Features 2 These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA=25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage

Otros transistores... MMBTH10RG, MMBTH11, MMBTH34, MP4501, MP4504, MPSW3725, NTE291, NTE292, 2SC4793, NZT560A, NZT605, NZT651, NZT660, NZT660A, NZT6714, TN6714A, NZT6715