NZT560 Datasheet, Equivalent, Cross Reference Search
Type Designator: NZT560
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-223
NZT560 Transistor Equivalent Substitute - Cross-Reference Search
NZT560 Datasheet (PDF)
nzt560.pdf
NZT560/NZT560ANPN Low Saturation Transistor4 These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.321SOT-2231. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter NZT560/NZT560A UnitsVCEO Collector-Emitter Voltage 60 VVCBO Collector-Base Voltage 80 V
nzt560 nzt560a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
nzt560-a.pdf
May 2009NZT560/NZT560ANPN Low Saturation TransistorFeatures2 These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.3211. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* TA=25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 60 VVCBO Collector-Base Voltage
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
