TN6725A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TN6725A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 1.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 10 pF

Ganancia de corriente contínua (hFE): 25000

Encapsulados: TO-226

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TN6725A datasheet

 ..1. Size:35K  fairchild semi
 tn6725a.pdf pdf_icon

TN6725A

Discrete Power & Signal Technologies TN6725A C TO-226 B E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* T A = 25 C unless otherwise noted Symbol Parameter Value Units 50 V VCES Collector-Emitter Voltage

 9.1. Size:27K  fairchild semi
 tn6727a.pdf pdf_icon

TN6725A

TN6727A C TO-226 B E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 77. See TN6726A for characteristics. Absolute Maximum Ratings* T A = 25 C unless otherwise noted Symbol Parameter Value Units 40 V VCES Collector-Emitter Voltage 50 V VCBO Collector-Base V

 9.2. Size:611K  fairchild semi
 tn6728a nzt6728.pdf pdf_icon

TN6725A

TN6728A NZT6728 C E E C B TO-226 C B SOT-223 E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 78. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 60 V

 9.3. Size:609K  fairchild semi
 tn6729a nzt6729.pdf pdf_icon

TN6725A

TN6729A NZT6729 C E C B TO-226 C B SOT-223 E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process 79. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 80 V V

MOSTRAR MÁS

Otros transistores... TN4033A, TN5320A, TN5415A, TN6705A, TN6707A, TN6716A, TN6718A, TN6719A, BC547B, TN6727A, ZTX749A, UNR1110, UNR1111, UNR1112, UNR1113, UNR1114, UNR1115