All Transistors. TN6725A Datasheet

 

TN6725A Datasheet and Replacement


   Type Designator: TN6725A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 1.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 25000
   Noise Figure, dB: -
   Package: TO-226
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TN6725A Datasheet (PDF)

 ..1. Size:35K  fairchild semi
 tn6725a.pdf pdf_icon

TN6725A

Discrete Power & Signal Technologies TN6725AC TO-226 B E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units50 VVCES Collector-Emitter Voltage

 9.1. Size:27K  fairchild semi
 tn6727a.pdf pdf_icon

TN6725A

TN6727AC TO-226 B E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 77. See TN6726A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units40 VVCES Collector-Emitter Voltage50 VVCBO Collector-Base V

 9.2. Size:611K  fairchild semi
 tn6728a nzt6728.pdf pdf_icon

TN6725A

TN6728ANZT6728CEECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 1.0 A.Sourced from Process 78.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VVCBO Collector-Base Voltage 60 V

 9.3. Size:609K  fairchild semi
 tn6729a nzt6729.pdf pdf_icon

TN6725A

TN6729A NZT6729CECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 800mA. Sourced from Process 79.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector-Base Voltage 80 VV

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI413 | ZXTP2012Z | 3DD13007_Z8 | D60T5050 | SD812 | GN4A4L | KRA741U

Keywords - TN6725A transistor datasheet

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