DP100 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DP100

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 330 MHz

Capacitancia de salida (Cc): 9 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: TO-92

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DP100 datasheet

 ..1. Size:83K  auk
dp100.pdf pdf_icon

DP100

DP100 Semiconductor Semiconductor PNP Silicon Transistor Features Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC/IB=-400mA/-20mA) Suitable for low voltage large current drivers Complementary pair with DN100 Switching Application Ordering Information Type NO. Marking Package Code DP100 DP100 TO-92 Outline Dimension

 0.1. Size:703K  fairchild semi
fdp100n10.pdf pdf_icon

DP100

September 2009 FDP100N10 tm N-Channel PowerTrench MOSFET 100V, 75A, 10m Features Description RDS(on) = 8.2m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet maintain superior switching perfo

 0.2. Size:250K  auk
dp100s.pdf pdf_icon

DP100

DP100S PNP Silicon Transistor Features PIN Connection Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC/IB=-400mA/-20mA) 3 Suitable for low voltage large current drivers Complementary pair with DN100S 1 Switching Application 2 SOT-23F Ordering Information Type NO. Marking Package Code P03 DP100S SOT-23F

 0.3. Size:126K  prisemi
ppmdp100v10.pdf pdf_icon

DP100

PPMDP100V10 P-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m ) ID(A) -100 170@VGS=10V -13 G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS 20 V TA=25 -13

Otros transistores... DN200F, DN500, DN500F, DN500P, DP030, DP030E, DP030S, DP030U, BD139, DP100S, DP500, DP500F, DP500P, MMBT3904EF, MMBT3906EF, NT331, NT332