All Transistors. DP100 Datasheet

 

DP100 Datasheet and Replacement


   Type Designator: DP100
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 330 MHz
   Collector Capacitance (Cc): 9 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO-92
 

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DP100 Datasheet (PDF)

 ..1. Size:83K  auk
dp100.pdf pdf_icon

DP100

DP100Semiconductor Semiconductor PNP Silicon TransistorFeatures Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC/IB=-400mA/-20mA) Suitable for low voltage large current drivers Complementary pair with DN100 Switching Application Ordering Information Type NO. Marking Package Code DP100 DP100 TO-92 Outline Dimension

 0.1. Size:703K  fairchild semi
fdp100n10.pdf pdf_icon

DP100

September 2009FDP100N10tmN-Channel PowerTrench MOSFET 100V, 75A, 10mFeatures Description RDS(on) = 8.2m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet maintain superior switching perfo

 0.2. Size:250K  auk
dp100s.pdf pdf_icon

DP100

DP100SPNP Silicon TransistorFeatures PIN Connection Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC/IB=-400mA/-20mA) 3 Suitable for low voltage large current drivers Complementary pair with DN100S 1 Switching Application 2 SOT-23F Ordering Information Type NO. Marking Package Code P03 DP100S SOT-23F

 0.3. Size:126K  prisemi
ppmdp100v10.pdf pdf_icon

DP100

PPMDP100V10 P-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m) ID(A) -100 170@VGS=10V -13G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS -100 VGate-Source Voltage VGS 20 V TA=25 -13

Datasheet: DN200F , DN500 , DN500F , DN500P , DP030 , DP030E , DP030S , DP030U , 2N5551 , DP100S , DP500 , DP500F , DP500P , MMBT3904EF , MMBT3906EF , NT331 , NT332 .

History: MMBT2484R | FZT2907R | KST2907A | 2SA190 | BFQ255A | CS9015C | 2SC5453

Keywords - DP100 transistor datasheet

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