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DP100S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DP100S
   Código: P03
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 15 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 330 MHz
   Capacitancia de salida (Cc): 9 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT-23
 

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DP100S Datasheet (PDF)

 ..1. Size:250K  auk
dp100s.pdf pdf_icon

DP100S

DP100SPNP Silicon TransistorFeatures PIN Connection Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC/IB=-400mA/-20mA) 3 Suitable for low voltage large current drivers Complementary pair with DN100S 1 Switching Application 2 SOT-23F Ordering Information Type NO. Marking Package Code P03 DP100S SOT-23F

 9.1. Size:703K  fairchild semi
fdp100n10.pdf pdf_icon

DP100S

September 2009FDP100N10tmN-Channel PowerTrench MOSFET 100V, 75A, 10mFeatures Description RDS(on) = 8.2m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet maintain superior switching perfo

 9.2. Size:83K  auk
dp100.pdf pdf_icon

DP100S

DP100Semiconductor Semiconductor PNP Silicon TransistorFeatures Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC/IB=-400mA/-20mA) Suitable for low voltage large current drivers Complementary pair with DN100 Switching Application Ordering Information Type NO. Marking Package Code DP100 DP100 TO-92 Outline Dimension

 9.3. Size:126K  prisemi
ppmdp100v10.pdf pdf_icon

DP100S

PPMDP100V10 P-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m) ID(A) -100 170@VGS=10V -13G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS -100 VGate-Source Voltage VGS 20 V TA=25 -13

Otros transistores... DN500 , DN500F , DN500P , DP030 , DP030E , DP030S , DP030U , DP100 , 2N3055 , DP500 , DP500F , DP500P , MMBT3904EF , MMBT3906EF , NT331 , NT332 , SBC327 .

History: 2N3056 | 2S703

 

 
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