DP100S Datasheet, Equivalent, Cross Reference Search
Type Designator: DP100S
SMD Transistor Code: P03
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 330 MHz
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT-23
DP100S Transistor Equivalent Substitute - Cross-Reference Search
DP100S Datasheet (PDF)
dp100s.pdf
DP100SPNP Silicon TransistorFeatures PIN Connection Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC/IB=-400mA/-20mA) 3 Suitable for low voltage large current drivers Complementary pair with DN100S 1 Switching Application 2 SOT-23F Ordering Information Type NO. Marking Package Code P03 DP100S SOT-23F
fdp100n10.pdf
September 2009FDP100N10tmN-Channel PowerTrench MOSFET 100V, 75A, 10mFeatures Description RDS(on) = 8.2m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet maintain superior switching perfo
dp100.pdf
DP100Semiconductor Semiconductor PNP Silicon TransistorFeatures Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC/IB=-400mA/-20mA) Suitable for low voltage large current drivers Complementary pair with DN100 Switching Application Ordering Information Type NO. Marking Package Code DP100 DP100 TO-92 Outline Dimension
ppmdp100v10.pdf
PPMDP100V10 P-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m) ID(A) -100 170@VGS=10V -13G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS -100 VGate-Source Voltage VGS 20 V TA=25 -13
pnmdp100v10.pdf
PNMDP100V10 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m) ID(A) 100 105@VGS=10V 9.6G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 100 VGate-Source Voltage VGS 20 V TA=25 9.6
fdp100n10.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDP100N10FEATURESWith TO-220 packagingLow switching lossUltra low gate chargeEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsAC-DC convertersLED lightingUninterruptible power supplyABSOLU
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
