DP100S Specs and Replacement

Type Designator: DP100S

SMD Transistor Code: P03

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 330 MHz

Collector Capacitance (Cc): 9 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT-23

 DP100S Substitution

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DP100S datasheet

 ..1. Size:250K  auk

dp100s.pdf pdf_icon

DP100S

DP100S PNP Silicon Transistor Features PIN Connection Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC/IB=-400mA/-20mA) 3 Suitable for low voltage large current drivers Complementary pair with DN100S 1 Switching Application 2 SOT-23F Ordering Information Type NO. Marking Package Code P03 DP100S SOT-23F ... See More ⇒

 9.1. Size:703K  fairchild semi

fdp100n10.pdf pdf_icon

DP100S

September 2009 FDP100N10 tm N-Channel PowerTrench MOSFET 100V, 75A, 10m Features Description RDS(on) = 8.2m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet maintain superior switching perfo... See More ⇒

 9.2. Size:83K  auk

dp100.pdf pdf_icon

DP100S

DP100 Semiconductor Semiconductor PNP Silicon Transistor Features Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC/IB=-400mA/-20mA) Suitable for low voltage large current drivers Complementary pair with DN100 Switching Application Ordering Information Type NO. Marking Package Code DP100 DP100 TO-92 Outline Dimension... See More ⇒

 9.3. Size:126K  prisemi

ppmdp100v10.pdf pdf_icon

DP100S

PPMDP100V10 P-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary D (2) VDS(V) RDS(on)(m ) ID(A) -100 170@VGS=10V -13 G (1) S (3) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS 20 V TA=25 -13... See More ⇒

Detailed specifications: DN500, DN500F, DN500P, DP030, DP030E, DP030S, DP030U, DP100, 2N3904, DP500, DP500F, DP500P, MMBT3904EF, MMBT3906EF, NT331, NT332, SBC327

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