STD1862L Todos los transistores

 

STD1862L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD1862L

Código: STD1862

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 170 MHz

Capacitancia de salida (Cc): 48 pF

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: TO-92L

Búsqueda de reemplazo de transistor bipolar STD1862L

 

STD1862L Datasheet (PDF)

1.1. std1862l.pdf Size:193K _auk

STD1862L
STD1862L

 STD1862L NPN Silicon Transistor Descriptions PIN Connection • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277L TO -92L 1: Emitter 2 :Collector 3: Base Ordering Information Type NO. Marking Package Code STD1862L STD1862 TO-92L Absolute maximum ratings (Ta=25°C) Characteristic Symbol Rati

3.1. std1862.pdf Size:224K _auk

STD1862L
STD1862L

 STD1862 NPN Silicon Transistor Descriptions PIN Connection • Audio power amplifier C • High current application B Features E • High current : IC=2A TO-92 • Complementary pair with STB1277 Ordering Information Type NO. Marking Package Code STD1862 STD1862 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltag

 5.1. std180n4f6.pdf Size:630K _1

STD1862L
STD1862L

STD180N4F6 N-channel 40 V, 2.5 mΩ typ., 80 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code V R max. I P DS DS(on) D TOT STD180N4F6 40 V 2.8 mΩ 80 A 130 W  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Figure 1: Internal schematic diagram Applications 

5.2. stb18n65m5 std18n65m5.pdf Size:1015K _st

STD1862L
STD1862L

STB18N65M5, STD18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages Datasheet — production data Features VDSS @ RDS(on) Order codes ID TAB TJmax max TAB STB18N65M5 710 V < 0.22 Ω 15 A 2 STD18N65M5 2 3 3 1 1 ■ Worldwide best RDS(on) * area D2PAK DPAK ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching per

 5.3. std1802t4-a.pdf Size:247K _st

STD1862L
STD1862L

STD1802T4-A Low voltage fast-switching NPN power transistor Features ■ This device is qualified for automotive application ■ Very low collector to emitter saturation voltage ■ High current gain characteristic 3 ■ Fast-switching speed 1 ■ Surface-mounting DPAK (TO-252) power TO-252 package in tape & reel (suffix “T4) DPAK (suffix “T4”) Description The device

5.4. stb18nf25 std18nf25.pdf Size:1107K _st

STD1862L
STD1862L

STB18NF25 STD18NF25 N-channel 250 V, 0.14 Ω, 17 A DPAK, D2PAK low gate charge STripFET™ II Power MOSFET Features RDS(on) Type VDSS ID PTOT max STB18NF25 250 V < 0.165 Ω 17 A 110 W STD18NF25 250 V < 0.165 Ω 17 A 110 W 3 3 1 1 ■ Low gate charge DPAK ■ 100% avalanche tested D²PAK ■ Exceptional dv/dt capability Application ■ Switching applications – Automot

 5.5. std18nf03l.pdf Size:304K _st

STD1862L
STD1862L

STD18NF03L N-channel 30V - 0.038Ω - 17A - DPAK STripFET™ II Power MOSFET Features Type VDSS RDS(on) ID STD18NF03L 30V <0.05Ω 17A ■ Exceptional dv/dt capability 3 1 ■ Low gate charge at 100°C DPAK ■ Application oriented characterization ■ 100% avalanche tested Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size"

5.6. stb18n55m5 std18n55m5 stf18n55m5 stp18n55m5.pdf Size:1247K _st

STD1862L
STD1862L

STB18N55M5, STD18N55M5 STF18N55M5, STP18N55M5 N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 Features VDSS RDS(on) Order codes ID 3 @TJmax max 1 3 1 STB18N55M5 DPAK D²PAK STD18N55M5 550 V < 0.24 Ω 13 A STF18N55M5 STP18N55M5 ■ DPAK worldwide best RDS(on) 3 3 ■ Higher VDSS rating 2 2 1 1 ■ High dv/dt capability TO

5.7. std1805.pdf Size:237K _st

STD1862L
STD1862L

STD1805 ® LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA Ordering Code Marking Shipment STD1805T4 D1805 Tape & Reel STD1805-1 D1805 Tube VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE 3 HIGH CURRENT GAIN CHARACTERISTIC 3 2 1 FAST-SWITCHING SPEED 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (Suffix "-1") IPAK DPAK SURFACE-MOUNTING DPAK (TO-252)

5.8. stu1855pl std1855pl.pdf Size:106K _samhop

STD1862L
STD1862L

S TU/D1855P L S amHop Microelectronics C orp. Arp,20 2005 ver1.1 P-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATUR ES R DS (ON) ( m Ω ) Max VDS S ID S uper high dense cell design for low R DS (ON). R ugged and reliable. 68 @ VGS =-10V -55V -15A TO-252 and TO-251 Package. 85 @ VGS = -4.5V D D G G S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-PA

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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