STD1862LNPN Silicon TransistorDescriptions PIN Connection Audio power amplifier High current application Features High current : IC=2A Complementary pair with STB1277L TO -92L 1: Emitter 2 :Collector 3: Base Ordering Information Type NO. Marking Package Code STD1862L STD1862 TO-92L Absolute maximum ratings (Ta=25C) Characteristic Symbol Rati

STD1862NPN Silicon TransistorDescriptions PIN Connection Audio power amplifier C High current application BFeatures E High current : IC=2A TO-92 Complementary pair with STB1277 Ordering Information Type NO. Marking Package Code STD1862 STD1862 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings UnitCollector-Base voltag

STD180N4F6 N-channel 40 V, 2.5 m typ., 80 A STripFET F6 Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code V R max. I P DS DS(on) D TOTSTD180N4F6 40 V 2.8 m 80 A 130 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications

STB18NF25STD18NF25N-channel 250 V, 0.14 , 17 A DPAK, D2PAKlow gate charge STripFET II Power MOSFETFeaturesRDS(on) Type VDSS ID PTOTmaxSTB18NF25 250 V

STD18N55M5, STP18N55M5DatasheetN-channel 550 V, 0.150 typ., 16 A MDmesh M5 Power MOSFETs in a DPAK and TO-220 packages FeaturesVDS @TABRDS(on)max.Order code PackageTABTjmax.32STD18N55M5 DPAK1600 V 0.192 32 STP18N55M5 TO-220DPAK TO-2201 Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performanceD(2, TA

STD1802Low voltage fast-switching NPN power transistorFeatures Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252) power 3package in tape & reel (suffix T4)1 TO-252Description DPAKThe device is manufactured in Planar technology (suffix T4)with Base Island l

STB18N65M5, STD18N65M5N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in DPAK and DPAK packagesDatasheet production dataFeaturesVDSS @ RDS(on) Order codes IDTABTJmax maxTABSTB18N65M5710 V

STD18NF03LN-channel 30V - 0.038 - 17A - DPAKSTripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTD18NF03L 30V

STD1805LOW VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORPRELIMINARY DATAOrdering Code Marking ShipmentSTD1805T4 D1805 Tape & ReelSTD1805-1 D1805 Tube VERY LOW COLLECTOR TO EMITTERSATURATION VOLTAGE3 HIGH CURRENT GAIN CHARACTERISTIC 321 FAST-SWITCHING SPEED1 THROUGH-HOLE IPAK (TO-251) POWERPACKAGE IN TUBE (Suffix "-1")IPAK DPAK SURFACE-MOUNTING DPAK (TO-252)

STD1802T4-ALow voltage fast-switching NPN power transistorFeatures This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic3 Fast-switching speed1 Surface-mounting DPAK (TO-252) power TO-252package in tape & reel (suffix T4) DPAK (suffix T4)DescriptionThe device

STB18N55M5, STD18N55M5STF18N55M5, STP18N55M5N-channel 550 V, 0.18 , 13 A, MDmesh V Power MOSFETin DPAK, DPAK, TO-220FP and TO-220FeaturesVDSS RDS(on) Order codes ID3@TJmax max131STB18N55M5DPAKDPAKSTD18N55M5550 V

S TU/D1855P LS amHop Microelectronics C orp.Arp,20 2005 ver1.1P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESR DS (ON) ( m ) MaxVDS S ID S uper high dense cell design for low R DS (ON).R ugged and reliable.68 @ VGS =-10V-55V -15ATO-252 and TO-251 Package.85 @ VGS = -4.5VDDGGSSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-PA

isc Silicon NPN Power Transistor STD1802DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= 0.4V(Max)( I = 3A; I = 0.15A)CE(sat C BDC Current Gain -h = 100(Min)@ I = 3AFE CFast -Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCCFL dirversVoltage regulatorsRelay dirversHigh efficiency l

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STD18N65M5FEATURESHigher V ratingDSSExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

Isc N-Channel MOSFET Transistor STD18N55M5FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol