STD6528EF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD6528EF  📄📄 

Código: ZB

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 1.5 pF

Ganancia de corriente contínua (hFE): 1000

Encapsulados: SOT-523F

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STD6528EF datasheet

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std6528ef.pdf pdf_icon

STD6528EF

STD6528EF NPN Silicon Transistor Application PIN Connection Micom Direct drive and switching Application Features 3 Very low saturation voltage VCE(sat)=0.2V (Max.) 1 @ IC=50mA, IB=5mA High DC current gain hFE=1000 2500 2 Small size SMD package SOT-523F Ordering Information Type NO. Marking Package Code ZB STD6528EF SOT-523F

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std6528s.pdf pdf_icon

STD6528EF

STD6528S Semiconductor Semiconductor NPN Silicon Transistor Application Micom Direct drive and switching Application Features Very low saturation voltage VCE(sat)=0.2V (Max.) @ IC=50mA, IB=5mA High DC current gain hFE=1000 2500 Ordering Information Type NO. Marking Package Code STD6528S ZA SOT-23 Outline Dimensions unit mm 2.20 2.60 1.20 1.40 1 3

 9.1. Size:800K  st
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STD6528EF

STD65N55LF3 N-channel 55 V, 7.0 m , 80 A DPAK STripFET III Power MOSFET Features RDS(on) Order code VDSS ID Pw max. STD65N55LF3 55 V

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STD6528EF

STD65N3LLH5 STU65N3LLH5 N-channel 30 V, 0.0061 , 65 A, DPAK, IPAK STripFET V Power MOSFET Features Type VDSS RDS(on) max ID STD65N3LLH5 30 V 0.0069 65 A STU65N3LLH5 30 V 0.0073 65 A 3 RDS(on) * Qg industry benchmark 3 2 1 1 Extremely low on-resistance RDS(on) Very low switching gate charge DPAK IPAK High avalanche ruggedness Low gate drive pow

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