STD6528EF Datasheet, Equivalent, Cross Reference Search
Type Designator: STD6528EF
SMD Transistor Code: ZB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: SOT-523F
STD6528EF Transistor Equivalent Substitute - Cross-Reference Search
STD6528EF Datasheet (PDF)
std6528ef.pdf
STD6528EFNPN Silicon TransistorApplication PIN Connection Micom Direct drive and switching Application Features 3 Very low saturation voltage: VCE(sat)=0.2V (Max.) 1 @ IC=50mA, IB=5mA High DC current gain: hFE=1000~2500 2 Small size SMD package SOT-523F Ordering Information Type NO. Marking Package Code ZB STD6528EF SOT-523F
std6528s.pdf
STD6528SSemiconductor Semiconductor NPN Silicon TransistorApplication Micom Direct drive and switching Application Features Very low saturation voltage: VCE(sat)=0.2V (Max.) @ IC=50mA, IB=5mA High DC current gain: hFE=1000~2500 Ordering Information Type NO. Marking Package Code STD6528S ZA SOT-23Outline Dimensions unit : mm 2.20~2.60 1.20~1.40 1 3
std65n55lf3.pdf
STD65N55LF3N-channel 55 V, 7.0 m, 80 A DPAKSTripFET III Power MOSFETFeaturesRDS(on) Order code VDSS ID Pwmax.STD65N55LF3 55 V
std65n3llh5 stu65n3llh5.pdf
STD65N3LLH5STU65N3LLH5N-channel 30 V, 0.0061 , 65 A, DPAK, IPAKSTripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTD65N3LLH5 30 V 0.0069 65 A STU65N3LLH5 30 V 0.0073 65 A3 RDS(on) * Qg industry benchmark 3211 Extremely low on-resistance RDS(on) Very low switching gate chargeDPAK IPAK High avalanche ruggedness Low gate drive pow
std65nf06 stp65nf06.pdf
STD65NF06STP65NF06N-channel 60V - 11.5m - 60A - DPAK/TO-220STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD65NF06 60V
std65n55f3.pdf
STD65N55F3N-channel 55V - 6.5m - 80A - DPAKSTripFET Power MOSFETFeaturesType VDSS RDS(on) ID PwSTD65N55F3 55V
stu650s std650s.pdf
GreenProductSTU/D650SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.75 @ VGS=10VTO-252 and TO-251 Package.16A65V97 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 25
std65n55f3.pdf
STD65N55F3www.VBsemi.tw N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0063 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0120ID (A) 97Configuration SingleDTO-252GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25
std65nf06.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor STD65NF06FEATURESWith TO-252( DPAK ) packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
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