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UNISONIC TECHNOLOGIES CO., 4126 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS . DESCRIPTION UTC 4126 is designed for specially used for electronic 1 ballasters in 110VAC environment. FEATURES TO-126 * Triple diffused technology. * High switching speed *Pb-free plating product number 4126L PIN CONFIGURATION PIN NO. PIN NA

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS4126/D Amplifier Transistor PNP Silicon MPS4126 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29 04, STYLE 1 TO 92 (TO 226AA) MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCE 25 Vdc Collector Base Voltage VCB 25 Vdc Emitter Base Voltage VEB 4.0 Vdc Collector Current Co

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4125/D Amplifier Transistors PNP Silicon 2N4125 2N4126 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol 2N4125 2N4126 Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 30 25 Vdc Collector Base Voltage VCBO 30 25 Vdc Emitter Base Voltage VEBO 4.0 Vdc Collector

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4126 PNP general purpose transistor 1997 Mar 25 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistor 2N4126 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 25 V). 1

Ordering number ENA0748A 2SK4126 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4126 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condi

2N4126 MMBT4126 C E C TO-92 B B SOT-23 E Mark ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch- ing applications at collector currents to 10 A as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base

KST4126 General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -4 V IC Collector Current -200 mA PC Collector Power Dissipation 350 mW TSTG Storage

PNP Silicon Switching Transistor SMBT 4126 High current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 4126 sC3 Q68000-A8549 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 25 V Collector-base voltage VCB0 25 Emitter-base voltage VEB0 4 Collect

New Product Si4126DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.00275 at VGS = 10 V 39 100 % Rg and UIS Tested COMPLIANT 30 30 nC 0.0034 at VGS = 4.5 V 35 APPLICATIONS Low-Side DC/DC Conversion - Notebook - Gaming SO-8 D SD 1 8 SD

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

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MMST4126 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary NPN Type Available (MMST4124) C Dim Min Max Ideal for Medium Power Amplification and Switching A 0.25 0.40 Ultra-Small Surface Mount Package B C B 1.15 1.35 Lead Free/RoHS Compliant (Note 2) "Green" Device (Notes 3 and 4) C 2.00

MMDT4126 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 Complementary NPN Type Available (MMDT4124) C2 B1 E1 Dim Min Max Ideal for Medium Power Amplification and Switching A 0.10 0.30 Ultra-Small Surface Mount Package B C B 1.15 1.35 Lead Free/RoHS Compliant (Note 3) C 2.00 2.20 "Green" Devic

MMBT4126 25V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Ideal for Medium Power Amplification and Switching Case Material Molded plastic, Green Molding Compound; Complementary NPN Type MMBT4124 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

MMBT4126LT1G General Purpose Transistor PNP Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model > 4000 V - Machine Model > 400 V COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO -25 Vdc Collector-Ba

MMBT4126LT1G General Purpose Transistor PNP Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model > 4000 V - Machine Model > 400 V COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO -25 Vdc Collector-Base

MPS4126 Amplifier Transistor PNP Silicon Features This is a Pb-Free Device* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCE -25 Vdc 1 Collector-Base Voltage VCB -25 Vdc EMITTER Emitter-Base Voltage VEB -4.0 Vdc Collector Current - Continuous IC -200 mAdc Total Device Dissipation @ TA = 25 C PD 625 W Derate above

UNISONIC TECHNOLOGIES CO., LTD 4126D NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC 4126D is a middling voltage NPN power transistor. it uses UTC s advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4126D is suitable for commonly power amplifier circuit, electro

2SC4126 Silicon NPN Epitaxial Application VHF and UHF wide band amplifier Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4126 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC

2N4126 -0.2 A, -25 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications. Complementary of the 2N4124 G H Emitter Base Collector J A D Millimeter REF. B Min. Max. Collecto

AOD4126/AOI4126 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43A trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

AOD4126/AOI4126 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43A trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

AOD4126/AOI4126 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43A trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

CHENMKO ENTERPRISE CO.,LTD CHT4126WGP SURFACE MOUNT General Purpose Transistor VOLTAGE 25 Volts CURRENT 200 mAmpere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SC-70/SOT-323 * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation.

CHENMKO ENTERPRISE CO.,LTD CHT4126SGP SURFACE MOUNT General Purpose Transistor VOLTAGE 25 Volts CURRENT 200 mAmpere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SC-88/SOT-363 * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation.

CHENMKO ENTERPRISE CO.,LTD CHT4126GP SURFACE MOUNT General Purpose Transistor VOLTAGE 25 Volts CURRENT 200 mAmpere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SOT-23 * Surface mount package. (SOT-23) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (1) * High saturat

isc N-Channel MOSFET Transistor AOTF4126 FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

isc N-Channel MOSFET Transistor 2SK4126 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.72 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor AOD4126 FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

isc N-Channel MOSFET Transistor AOI4126 FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose