UNISONIC TECHNOLOGIES CO., 4126 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS . DESCRIPTION UTC 4126 is designed for specially used for electronic 1ballasters in 110VAC environment. FEATURES TO-126* Triple diffused technology. * High switching speed *Pb-free plating product number: 4126L PIN CONFIGURATION PIN NO. PIN NA

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS4126/DAmplifier TransistorPNP SiliconMPS4126COLLECTOR32BASE1EMITTER123CASE 2904, STYLE 1TO92 (TO226AA)MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCE 25 VdcCollectorBase Voltage VCB 25 VdcEmitterBase Voltage VEB 4.0 VdcCollector Current Co

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4125/DAmplifier TransistorsPNP Silicon2N41252N4126COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol 2N4125 2N4126 UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 30 25 VdcCollectorBase Voltage VCBO 30 25 VdcEmitterBase Voltage VEBO 4.0 VdcCollector

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N4126PNP general purpose transistor1997 Mar 25Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP general purpose transistor 2N4126FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 25 V).1

Ordering number : ENA0748A 2SK4126SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4126ApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condi

2N4126 MMBT4126CEC TO-92B BSOT-23EMark: ZFPNP General Purpose AmplifierThis device is designed for general purpose amplifier and switch-ing applications at collector currents to 10 A as a switch and to100 mA as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base

KST4126General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -25 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -4 VIC Collector Current -200 mAPC Collector Power Dissipation 350 mWTSTG Storage

PNP Silicon Switching Transistor SMBT 4126 High current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltageType Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBT 4126 sC3 Q68000-A8549 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 25 VCollector-base voltage VCB0 25Emitter-base voltage VEB0 4Collect

New ProductSi4126DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS0.00275 at VGS = 10 V 39 100 % Rg and UIS TestedCOMPLIANT 30 30 nC0.0034 at VGS = 4.5 V 35APPLICATIONS Low-Side DC/DC Conversion- Notebook- GamingSO-8 D SD1 8 SD

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

SOT SI I O A A T 6S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

MMST4126 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-323 Complementary NPN Type Available (MMST4124) C Dim Min Max Ideal for Medium Power Amplification and Switching A 0.25 0.40 Ultra-Small Surface Mount Package B CB 1.15 1.35 Lead Free/RoHS Compliant (Note 2) "Green" Device (Notes 3 and 4) C 2.00

MMDT4126 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 Complementary NPN Type Available (MMDT4124) C2 B1 E1Dim Min Max Ideal for Medium Power Amplification and Switching A 0.10 0.30 Ultra-Small Surface Mount Package B CB 1.15 1.35 Lead Free/RoHS Compliant (Note 3) C 2.00 2.20 "Green" Devic

MMBT4126 25V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Medium Power Amplification and Switching Case Material: Molded plastic, Green Molding Compound; Complementary NPN Type: MMBT4124 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

MMBT4126LT1GGeneral Purpose TransistorPNP SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating: - Human Body Model: > 4000 V- Machine Model: > 400 V COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit EMITTERCollector-Emitter Voltage VCEO -25 VdcCollector-Ba

MMBT4126LT1GGeneral Purpose TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1 www.onsemi.com ESD Rating: - Human Body Model: > 4000 V- Machine Model: > 400 VCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value Unit EMITTERCollector-Emitter Voltage VCEO -25 VdcCollector-Base

MPS4126Amplifier TransistorPNP SiliconFeatures This is a Pb-Free Device*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE -25 Vdc1Collector-Base Voltage VCB -25 VdcEMITTEREmitter-Base Voltage VEB -4.0 VdcCollector Current - Continuous IC -200 mAdcTotal Device Dissipation @ TA = 25C PD 625 WDerate above

UNISONIC TECHNOLOGIES CO., LTD 4126D NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC 4126D is a middling voltage NPN power transistor. it uses UTCs advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4126D is suitable for commonly power amplifiercircuit, electro

2SC4126Silicon NPN EpitaxialApplicationVHF and UHF wide band amplifierOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC4126Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 2VCollector current IC 50 mACollector power dissipation PC

2N4126 -0.2 A, -25 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications. Complementary of the 2N4124 G H Emitter Base CollectorJA DMillimeter REF. BMin. Max.Collecto

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT4126GENERAL PURPOSE TRANSISTORPNP transistorMarkingCMBT4126 = 5EPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 25 VCollectoremitter voltage (open base)

AOTF4126100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOTF4126 is fabricated with SDMOSTM trench ID (at VGS=10V) 27Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

AOD4126/AOI4126100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43Atrench technology that combines excellent RDS(ON) withlow gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

AOD4126/AOI4126100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43Atrench technology that combines excellent RDS(ON) withlow gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

AOD4126/AOI4126100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43Atrench technology that combines excellent RDS(ON) withlow gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

NPN MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD4126PL MAIN CHARACTERISTICS Package I 3A CV 200V CEOP (TO-92) 1W CP (TO-126/126S) 40W CP (TO-220) 60W CAPPLICATIONS Energy-saving light Electronic ballasts Electronic transformer

CHENMKO ENTERPRISE CO.,LTDCHT4126WGPSURFACE MOUNTGeneral Purpose TransistorVOLTAGE 25 Volts CURRENT 200 mAmpereAPPLICATION* AF input stages and driver applicationon equipment.* Other general purpose applications.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.

CHENMKO ENTERPRISE CO.,LTDCHT4126SGPSURFACE MOUNTGeneral Purpose TransistorVOLTAGE 25 Volts CURRENT 200 mAmpereAPPLICATION* AF input stages and driver applicationon equipment.* Other general purpose applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.

CHENMKO ENTERPRISE CO.,LTDCHT4126GPSURFACE MOUNTGeneral Purpose TransistorVOLTAGE 25 Volts CURRENT 200 mAmpereAPPLICATION* AF input stages and driver applicationon equipment.* Other general purpose applications.FEATURESOT-23* Surface mount package. (SOT-23)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(1)* High saturat

2N3906(3CG3906) PNP /SILICON PNP TRANSISTOR : Purpose: General amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40 V CBO V -40 V CEO V -5.0 V EBO I -200 mA C P 625 mW CT 150 j T -55150 stg /Electrical characteristics(Ta=25

isc N-Channel MOSFET Transistor AOTF4126FEATURESDrain Current I = 27A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor 2SK4126FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.72(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor AOD4126FEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor AOI4126FEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose