5302D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 5302D

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 800 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO-252 TO-92 TO-126 TO-251 SOT-223

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5302D datasheet

 ..1. Size:251K  utc
 5302d.pdf pdf_icon

5302D

UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES * Internal free-wheeling diode * Makes efficient anti-saturation operation * Low variable storage-time spread * Low bas

 0.1. Size:241K  international rectifier
 irfh5302dpbf.pdf pdf_icon

5302D

IRFH5302DPbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.5 m (@VGS = 10V) VSD max 0.65 V (@IS = 5.0A) trr (typical) 19 ns ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Benefits Features Low RDSon (

 0.2. Size:233K  taiwansemi
 tsc5302d.pdf pdf_icon

5302D

TSC5302D High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition PRODUCT SUMMARY (IPAK) (DPAK) 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 2A VCE(SAT) 1.1V @ IC / IB = 1A / 0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation No Need to Interest an hfe Value Because of Low Variab

Otros transistores... 2SA1627A, 2SC5027E, 2SC5353B, 2SC5889, 2SD2470, 4124D, 4126D, 4128D, 8550, C6084, D4120P, D65H2, HJ44H11, MJE13001, MJE13001P, MJE13002-E, MJE13003D