All Transistors. 5302D Datasheet

 

5302D Datasheet and Replacement


   Type Designator: 5302D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO-252 TO-92 TO-126 TO-251 SOT-223
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5302D Datasheet (PDF)

 ..1. Size:251K  utc
 5302d.pdf pdf_icon

5302D

UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES * Internal free-wheeling diode * Makes efficient anti-saturation operation * Low variable storage-time spread * Low bas

 0.1. Size:241K  international rectifier
 irfh5302dpbf.pdf pdf_icon

5302D

IRFH5302DPbFHEXFET Power MOSFETVDS 30 VRDS(on) max 2.5 m(@VGS = 10V)VSD max 0.65 V(@IS = 5.0A)trr (typical)19 nsID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsBenefitsFeaturesLow RDSon (

 0.2. Size:233K  taiwansemi
 tsc5302d.pdf pdf_icon

5302D

TSC5302D High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 2A VCE(SAT) 1.1V @ IC / IB = 1A / 0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation No Need to Interest an hfe Value Because of Low Variab

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: CZT2680 | RT1N151C | 2SA2125 | 2SC3842 | NESG2031M05 | 2SA2069 | D28B

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