5302D Specs and Replacement

Type Designator: 5302D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO-252 TO-92 TO-126 TO-251 SOT-223

 5302D Substitution

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5302D datasheet

 ..1. Size:251K  utc

 5302d.pdf pdf_icon

5302D

UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES * Internal free-wheeling diode * Makes efficient anti-saturation operation * Low variable storage-time spread * Low bas... See More ⇒

 0.1. Size:241K  international rectifier

 irfh5302dpbf.pdf pdf_icon

5302D

IRFH5302DPbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.5 m (@VGS = 10V) VSD max 0.65 V (@IS = 5.0A) trr (typical) 19 ns ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Benefits Features Low RDSon (... See More ⇒

 0.2. Size:233K  taiwansemi

 tsc5302d.pdf pdf_icon

5302D

TSC5302D High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition PRODUCT SUMMARY (IPAK) (DPAK) 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 2A VCE(SAT) 1.1V @ IC / IB = 1A / 0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation No Need to Interest an hfe Value Because of Low Variab... See More ⇒

Detailed specifications: 2SA1627A, 2SC5027E, 2SC5353B, 2SC5889, 2SD2470, 4124D, 4126D, 4128D, 8550, C6084, D4120P, D65H2, HJ44H11, MJE13001, MJE13001P, MJE13002-E, MJE13003D

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