2N6388 Todos los transistores

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2N6388 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N6388

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 20 MHz

Capacitancia de salida (Cc): 200 pF

Ganancia de corriente contínua (hfe): 1000

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2N6388

 

2N6388 Datasheet (PDF)

1.1. 2n6387 2n6388.pdf Size:164K _motorola

2N6388
2N6388

Order this document MOTOROLA by 2N6387/D SEMICONDUCTOR TECHNICAL DATA 2N6387 Plastic Medium-Power 2N6388* Silicon Transistors *Motorola Preferred Device . . . designed for generalpurpose amplifier and lowspeed switching applications. DARLINGTON High DC Current Gain 8 AND 10 AMPERE hFE = 2500 (Typ) @ IC = 4.0 Adc NPN SILICON CollectorEmitter Sustaining Voltage @ 100 mAdc

1.2. 2n6388.pdf Size:109K _st

2N6388
2N6388

2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power 3 2 transistor in monolithic Darlington configuration 1 mounted in Jedec TO-220 plastic package. It is inteded for use in low and medium fr

1.3. 2n6386 2n6387 2n6388.pdf Size:158K _jmnic

2N6388
2N6388

JMnic Product Specification Silicon NPN Power Transistors 2N6386 2N6387 2N6388 DESCRIPTION ·With TO-220C package ·Complement to type 2N6666/6667/6668 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2

1.4. 2n6386 2n6387 2n6388.pdf Size:121K _inchange_semiconductor

2N6388
2N6388

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type 2N6666/6667/6668 Ў¤ DARLINGTON Ў¤ High DC current gain Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Designed for general-purpose amplifier and low speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emit

1.5. 2n6388.pdf Size:120K _inchange_semiconductor

2N6388
2N6388

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6388 DESCRIPTION Ў¤ With TO-220 package Ў¤ High current capability Ў¤ DARLINGTON APPLICATIONS Ў¤ Intended for use in low and medium frequency power applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEB

1.6. h2n6388.pdf Size:41K _hsmc

2N6388
2N6388

Spec. No. : HE6714 HI-SINCERITY Issued Date : 1992.12.15 Revised Date : 2004.11.03 MICROELECTRONICS CORP. Page No. : 1/4 H2N6388 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6388 is designed for general-purpose amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ...........................................

Otros transistores... 2N6380 , 2N6381 , 2N6382 , 2N6383 , 2N6384 , 2N6385 , 2N6386 , 2N6387 , C103 , 2N6389 , 2N638A , 2N638B , 2N639 , 2N6390 , 2N6391 , 2N6392 , 2N6393 .

 


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