2N6388 Datasheet and Replacement

Order this documentMOTOROLAby 2N6387/DSEMICONDUCTOR TECHNICAL DATA2N6387Plastic Medium-Power2N6388*Silicon Transistors*Motorola Preferred Device. . . designed for generalpurpose amplifier and lowspeed switching applications.DARLINGTON High DC Current Gain 8 AND 10 AMPEREhFE = 2500 (Typ) @ IC = 4.0 AdcNPN SILICON CollectorEmitter Sustaining Voltage

2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power32transistor in monolithic Darlington configuration1mounted in Jedec TO-220 plastic package.It is inteded for use in low and mediu

JMnic Product Specification Silicon NPN Power Transistors 2N6386 2N6387 2N6388 DESCRIPTION With TO-220C package Complement to type 2N6666/6667/6668 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6386 2N6387 2N6388 DESCRIPTION With TO-220C package Complement to type 2N6666/6667/6668 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION1 Base Collecto

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6388 DESCRIPTION With TO-220 package High current capability DARLINGTON APPLICATIONS Intended for use in low and medium frequency power applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMET

Spec. No. : HE6714HI-SINCERITYIssued Date : 1992.12.15Revised Date : 2004.11.03MICROELECTRONICS CORP.Page No. : 1/4H2N6388NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N6388 is designed for general-purpose amplifier and switchingapplications.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ........................................

TM2N6383Central2N6384Semiconductor Corp.2N6385NPN SILICON POWER DESCRIPTION:DARLINGTON TRANSISTORThe CENTRAL SEMICONDUCTOR 2N3683 SERIEStypes are NPN Silicon Power Darlington Transistorsdesigned for power amplifier applications.MARKING: FULL PART NUMBERTO-3 CASEMAXIMUM RATINGS: (TC=25C) SYMBOL 2N6383 2N6384 2N6385 UNITSCollector-Base Voltage VCBO 40 60 80 VColl

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2N6385SMD05MECHANICAL DATADimensions in mm (inches)SILICON POWER NPNDARLINGTON TRANSISTOR7.54 (0.296)0.76 (0.030)min.FEATURES3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) High Gain Darlington Performance1 32 APPLICATIONS Audio Amplifiers Hammer Drivers 0.127 (0.005) Shunt and Series Regulators16 PLCS 0.127 (0.005) 0.50(0.020)

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N6387NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS2N6388TO-220Plastic PackageDesigned for General Purpose Amplifier and Low Speed Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N6387 2N6388 UNITVCEO Collector Emitter Voltage 60 80 VVCBO Collector Base Voltage

JMnic Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 DESCRIPTION With TO-3 package Complement to type 2N6648/6649/6650 DARLINGTON High DC current gain APPLICATIONS Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN DESCRIPTION1 B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 DESCRIPTION With TO-3 package Complement to type 2N6648/6649/6650 DARLINGTON High DC current gain APPLICATIONS Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN