DTD114E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTD114E 📄📄
Código: DB4E
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Ganancia de corriente contínua (hFE): 56
Encapsulados: SOT23
SOT323
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DTD114E datasheet
..1. Size:165K utc
dtd114e.pdf 
UNISONIC TECHNOLOGIES CO., LTD DTD114E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing
..2. Size:982K kexin
dtd114e.pdf
SMD Type Transistors Digital Transistors DTD114E (KDTD114E) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) 1 2 The bias resistors consist of thin-film resistors with complete +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.
0.1. Size:49K motorola
pdtd114et 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 PDTD114ET NPN resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTD114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handboo
0.2. Size:49K philips
pdtd114et 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 PDTD114ET NPN resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTD114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handboo
0.3. Size:84K rohm
dtd114es dtd114ek.pdf
DTD114EK / DTD114ES Transistors 500mA / 50V Digital transistors (with built-in resistors) DTD114EK / DTD114ES Applications External dimensions (Unit mm) Inverter, Interface, Driver 2.9 1.1 DTD114EK 0.4 0.8 (3) Feature 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (2) (1) (see equivalent circui
0.4. Size:159K rohm
dtd114ek.pdf
500mA / 50V Digital transistors (with built-in resistors) DTD114EK Applications Dimensions (Unit mm) Inverter, Interface, Driver 2.9 1.1 DTD114EK 0.4 0.8 Features (3) 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). (2) (1) 2)The bias resistors consist of thin-film
0.5. Size:70K diodes
ddtd114ec.pdf
DDTD (xxxx) C NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case SOT-23 Complementary PNP Types Available (DDTB) Case Material Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re
0.6. Size:167K diodes
ddtd114eu.pdf
DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.
0.7. Size:142K cystek
dtd114ea3.pdf
Spec. No. C377A3 Issued Date 2003.10.07 CYStech Electronics Corp. Revised Date 2004.03.03 Page No. 1/4 NPN Digital Transistors (Built-in Resistors) DTD114EA3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi
0.8. Size:150K cystek
dtd114en3.pdf
Spec. No. C377N3 Issued Date 2004.01.15 CYStech Electronics Corp. Revised Date Page No. 1/4 NPN Digital Transistors (Built-in Resistors) DTD114EN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complet
0.9. Size:345K lrc
ldtd114eet1g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTD114EET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist
0.10. Size:99K chenmko
chdtd114ekgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTD114EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi
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