DTD114E Todos los transistores

 

DTD114E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DTD114E
   Código: DB4E
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 56
   Paquete / Cubierta: SOT23 SOT323
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DTD114E Datasheet (PDF)

 ..1. Size:165K  utc
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DTD114E

UNISONIC TECHNOLOGIES CO., LTD DTD114E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

 ..2. Size:982K  kexin
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DTD114E

SMD Type TransistorsDigital TransistorsDTD114E (KDTD114E)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)1 2 The bias resistors consist of thin-film resistors with complete+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.

 0.1. Size:49K  motorola
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DTD114E

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D088PDTD114ETNPN resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTD114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handboo

 0.2. Size:49K  philips
pdtd114et 4.pdf pdf_icon

DTD114E

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D088PDTD114ETNPN resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTD114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handboo

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N3763S | CZTA77 | 2SC354

 

 
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