Биполярный транзистор DTD114E
Даташит. Аналоги
Наименование производителя: DTD114E
Маркировка: DB4E
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 200
MHz
Статический коэффициент передачи тока (hfe): 56
Корпус транзистора:
SOT23
SOT323
- подбор биполярного транзистора по параметрам
DTD114E
Datasheet (PDF)
..1. Size:165K utc
dtd114e.pdf 

UNISONIC TECHNOLOGIES CO., LTD DTD114E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing
..2. Size:982K kexin
dtd114e.pdf 

SMD Type TransistorsDigital TransistorsDTD114E (KDTD114E)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)1 2 The bias resistors consist of thin-film resistors with complete+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.
0.1. Size:49K motorola
pdtd114et 4.pdf 

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D088PDTD114ETNPN resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTD114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handboo
0.2. Size:49K philips
pdtd114et 4.pdf 

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D088PDTD114ETNPN resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTD114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handboo
0.3. Size:84K rohm
dtd114es dtd114ek.pdf 

DTD114EK / DTD114ES Transistors 500mA / 50V Digital transistors (with built-in resistors) DTD114EK / DTD114ES Applications External dimensions (Unit : mm) Inverter, Interface, Driver 2.9 1.1DTD114EK0.4 0.8(3) Feature 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (2) (1)(see equivalent circui
0.4. Size:159K rohm
dtd114ek.pdf 

500mA / 50V Digital transistors (with built-in resistors) DTD114EK Applications Dimensions (Unit : mm) Inverter, Interface, Driver 2.9 1.1DTD114EK0.4 0.8 Features (3)1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). (2) (1)2)The bias resistors consist of thin-film
0.5. Size:70K diodes
ddtd114ec.pdf 

DDTD (xxxx) CNPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Re
0.6. Size:167K diodes
ddtd114eu.pdf 

DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.
0.7. Size:142K cystek
dtd114ea3.pdf 

Spec. No. : C377A3 Issued Date : 2003.10.07 CYStech Electronics Corp. Revised Date :2004.03.03 Page No. : 1/4 NPN Digital Transistors (Built-in Resistors) DTD114EA3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi
0.8. Size:150K cystek
dtd114en3.pdf 

Spec. No. : C377N3 Issued Date : 2004.01.15 CYStech Electronics Corp. Revised Date : Page No. : 1/4 NPN Digital Transistors (Built-in Resistors) DTD114EN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complet
0.9. Size:345K lrc
ldtd114eet1g.pdf 

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTD114EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist
0.10. Size:99K chenmko
chdtd114ekgp.pdf 

CHENMKO ENTERPRISE CO.,LTDCHDTD114EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi
Другие транзисторы... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP31
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
History: 2SB1127S
| DDTD123EC
| BFR81
| 2SAR523M