DTD114E PDF and Equivalents Search

 

DTD114E Specs and Replacement

Type Designator: DTD114E

SMD Transistor Code: DB4E

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 56

Noise Figure, dB: -

Package: SOT23 SOT323

 DTD114E Substitution

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DTD114E datasheet

 ..1. Size:165K  utc

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DTD114E

UNISONIC TECHNOLOGIES CO., LTD DTD114E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing ... See More ⇒

 ..2. Size:982K  kexin

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DTD114E

SMD Type Transistors Digital Transistors DTD114E (KDTD114E) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) 1 2 The bias resistors consist of thin-film resistors with complete +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.... See More ⇒

 0.1. Size:49K  motorola

pdtd114et 4.pdf pdf_icon

DTD114E

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 PDTD114ET NPN resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTD114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handboo... See More ⇒

 0.2. Size:49K  philips

pdtd114et 4.pdf pdf_icon

DTD114E

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 PDTD114ET NPN resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTD114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handboo... See More ⇒

Detailed specifications: DTC124T, DTC143E, DTC143T, DTC143X, DTC143Z, DTC144E, DTC144T, DTD113Z, D209L, DTD143E, BUL6802, BUL6821, BUL6822, BUL6822A, BUL6823, BUL6823A, MJE13003BR

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