BUL6802 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUL6802 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 600 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 1.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO126 TO126S
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BUL6802 datasheet
bul6802.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN BUL /BUL SERIES TRANSISTORS BUL6802 NPN BUL /BUL SERIES TRANSISTORS BUL6802 NPN
bul68a.pdf
BUL68A SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) 5.46 (0.215) 0.94 (0.037) SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051) Designed for use in 5.97 (0.235) 6.22 (0.245) electronic ballast applications 1 2 3 SEMEFAB DESIGNED AND
bul68b.pdf
BUL68B SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) 5.46 (0.215) 0.94 (0.037) SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051) Designed for use in 5.97 (0.235) 6.22 (0.245) electronic ballast applications 1 2 3 SEMEFAB DESIGNED AND
bul6825.pdf
Product Specification www.jmnic.com Silicon Power Transistors BUL6825 DESCRIPTION High voltage ,high speed With TO-220C package APPLICATIONS Relay drivers Inverters Switching regulators Deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Co
Otros transistores... DTC143T, DTC143X, DTC143Z, DTC144E, DTC144T, DTD113Z, DTD114E, DTD143E, 2222A, BUL6821, BUL6822, BUL6822A, BUL6823, BUL6823A, MJE13003BR, MJE13003BRH, 2SB1334A
Parámetros del transistor bipolar y su interrelación.
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