MJE13003BR Todos los transistores

 ..1. Size:385K  sisemi
 mje13003br.pdf

 0.1. Size:385K  sisemi
 mje13003brh.pdf

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJ

 5.1. Size:178K  wietron
 mje13003b.pdf

WEITRON MJE13003B High Voltage Fast-switching COLLECTOR 2. NPN Power Transistor P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE DESCRIPTION 1. The device is manufactured using high voltage EMITTER TO-92 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enh

 5.2. Size:206K  sisemi
 mje13003b.pdf

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE

 5.3. Size:77K  first silicon
 mje13003b.pdf

SEMICONDUCTOR MJE13003B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS ton=0.5 S(Max.), tf=0.7 S(Max.), at IC=1A A 4 70 MAX E K B 4 80 MAX High Collector Voltage VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _ MA