MJE13003BR Specs and Replacement
Type Designator: MJE13003BR
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO126 TO126S
MJE13003BR Substitution
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MJE13003BR datasheet
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJ... See More ⇒
WEITRON MJE13003B High Voltage Fast-switching COLLECTOR 2. NPN Power Transistor P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE DESCRIPTION 1. The device is manufactured using high voltage EMITTER TO-92 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enh... See More ⇒
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE ... See More ⇒
Detailed specifications: DTD114E, DTD143E, BUL6802, BUL6821, BUL6822, BUL6822A, BUL6823, BUL6823A, BC549, MJE13003BRH, 2SB1334A, MJE13009A, BLD101D, BLD102D, BLD112D, BLD122D, BLD122DL
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