MJE13001AH Todos los transistores

 

MJE13001AH Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE13001AH
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 480 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 0.3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO92 TO92S
 

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MJE13001AH datasheet

 ..1. Size:315K  sisemi
 mje13001ah.pdf pdf_icon

MJE13001AH

 5.1. Size:153K  foshan
 mje13001a2.pdf pdf_icon

MJE13001AH

MJE13001A2(3DD13001A2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg

 5.2. Size:187K  foshan
 mje13001at.pdf pdf_icon

MJE13001AH

MJE13001AT(3DD13001AT) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg

 5.3. Size:147K  foshan
 mje13001a1.pdf pdf_icon

MJE13001AH

MJE13001A1(3DD13001A1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg

MOSTRAR MÁS

Otros transistores... BLD135DL , BLD137D , BLD137DL , BLD139D , BLD139DL , BLD155DL , BLDB128D , BUL68H5T , TIP41C , MJE13001H , MJE13002AHT , MJE13003HT , LB120A3 , 2N4401A3 , 2N4403A3 , BC517A3 , BC807N3 .

 

 
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