MJE13001AH PDF and Equivalents Search

 

MJE13001AH Specs and Replacement

Type Designator: MJE13001AH

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 480 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO92 TO92S

 MJE13001AH Substitution

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MJE13001AH datasheet

 ..1. Size:315K  sisemi

mje13001ah.pdf pdf_icon

MJE13001AH

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 5.1. Size:153K  foshan

mje13001a2.pdf pdf_icon

MJE13001AH

MJE13001A2(3DD13001A2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg ... See More ⇒

 5.2. Size:187K  foshan

mje13001at.pdf pdf_icon

MJE13001AH

MJE13001AT(3DD13001AT) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg ... See More ⇒

 5.3. Size:147K  foshan

mje13001a1.pdf pdf_icon

MJE13001AH

MJE13001A1(3DD13001A1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg ... See More ⇒

Detailed specifications: BLD135DL , BLD137D , BLD137DL , BLD139D , BLD139DL , BLD155DL , BLDB128D , BUL68H5T , TIP41C , MJE13001H , MJE13002AHT , MJE13003HT , LB120A3 , 2N4401A3 , 2N4403A3 , BC517A3 , BC807N3 .

Keywords - MJE13001AH pdf specs

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