All Transistors. MJE13001AH Datasheet

 

MJE13001AH Datasheet and Replacement


   Type Designator: MJE13001AH
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 480 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO92 TO92S
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MJE13001AH Datasheet (PDF)

 ..1. Size:315K  sisemi
 mje13001ah.pdf pdf_icon

MJE13001AH

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13001AHNPN MJE /MJE SERIES TRANSISTORS MJE13001AHNPN MJE

 5.1. Size:153K  foshan
 mje13001a2.pdf pdf_icon

MJE13001AH

MJE13001A2(3DD13001A2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25) 0.8 W CT 150 j T -55150 stg

 5.2. Size:187K  foshan
 mje13001at.pdf pdf_icon

MJE13001AH

MJE13001AT(3DD13001AT) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25) 0.8 W CT 150 j T -55150 stg

 5.3. Size:147K  foshan
 mje13001a1.pdf pdf_icon

MJE13001AH

MJE13001A1(3DD13001A1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25) 0.8 W CT 150 j T -55150 stg

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History: FF2484 | 2N2079A | BLX20 | MPSH20 | BTD1858I3 | ESM855 | BD612

Keywords - MJE13001AH transistor datasheet

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