BTA1972K3
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTA1972K3
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9
W
Tensión colector-base (Vcb): 400
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 0.3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40
MHz
Capacitancia de salida (Cc): 8
pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
TO92L
Búsqueda de reemplazo de transistor bipolar BTA1972K3
BTA1972K3
Datasheet (PDF)
..1. Size:273K cystek
bta1972k3.pdf
Spec. No. : C236K3 Issued Date : 2012.10.23 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/6 Silicon PNP Epitaxial Planar Transistor BTA1972K3Description High BV CEO High current capability Pb-free lead plating and halogen-free package Symbol Outline TO-92L BTA1972K3 BBase CCollector EEmitter Ordering Information Device
9.1. Size:271K cystek
bta1952j3.pdf
Spec. No. : C601J3 Issued Date : 2004.05.17 CYStech Electronics Corp.Revised Date :2013.03.12 Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -80VIC -5ABTA1952J3 RCESAT 150m Features Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain characteristics Wide SOA Complementary to BTC5103J3 R
9.2. Size:210K cystek
bta1952i3.pdf
Spec. No. : C601I3 Issued Date : 2005.10.14 CYStech Electronics Corp.Revised Date : 2009.02.04 Page No. : 1/ 5 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -60VIC -5ABTA1952I3 RCESAT 150m Features Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -3A / -0.15A Excellent DC current gain characteristics Wide SOA Complementary to BTC5103I3
9.3. Size:148K cystek
bta1952e3.pdf
Spec. No. : C601E3-A Issued Date : 2004.09.16 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTA1952E3 Features Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A Excellent DC current gain characteristics Wide SOA Symbol Outline BTA1952E3 TO-220AB BBase CCollector B C E EEmi
9.4. Size:237K cystek
bta1900m3.pdf
Spec. No. : C314M3 Issued Date : 2007.04.23 CYStech Electronics Corp.Revised Date : 2013.08.07 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1900M3Features Large continuous collector current capability Low collector saturation voltage Pb-free lead plating package Symbol Outline BTA1900M3 SOT-89 BBase CCollector B C E EEm
Otros transistores... 2N3192
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.