All Transistors. BTA1972K3 Datasheet

 

BTA1972K3 Datasheet and Replacement


   Type Designator: BTA1972K3
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92L
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BTA1972K3 Datasheet (PDF)

 ..1. Size:273K  cystek
bta1972k3.pdf pdf_icon

BTA1972K3

Spec. No. : C236K3 Issued Date : 2012.10.23 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/6 Silicon PNP Epitaxial Planar Transistor BTA1972K3Description High BV CEO High current capability Pb-free lead plating and halogen-free package Symbol Outline TO-92L BTA1972K3 BBase CCollector EEmitter Ordering Information Device

 9.1. Size:271K  cystek
bta1952j3.pdf pdf_icon

BTA1972K3

Spec. No. : C601J3 Issued Date : 2004.05.17 CYStech Electronics Corp.Revised Date :2013.03.12 Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -80VIC -5ABTA1952J3 RCESAT 150m Features Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain characteristics Wide SOA Complementary to BTC5103J3 R

 9.2. Size:210K  cystek
bta1952i3.pdf pdf_icon

BTA1972K3

Spec. No. : C601I3 Issued Date : 2005.10.14 CYStech Electronics Corp.Revised Date : 2009.02.04 Page No. : 1/ 5 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -60VIC -5ABTA1952I3 RCESAT 150m Features Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -3A / -0.15A Excellent DC current gain characteristics Wide SOA Complementary to BTC5103I3

 9.3. Size:148K  cystek
bta1952e3.pdf pdf_icon

BTA1972K3

Spec. No. : C601E3-A Issued Date : 2004.09.16 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTA1952E3 Features Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A Excellent DC current gain characteristics Wide SOA Symbol Outline BTA1952E3 TO-220AB BBase CCollector B C E EEmi

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: FZT560 | CH867UPNGP | ET5065 | AFY29 | NJD2873T4G | BC651DS | 2S157

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