BTB1184J3 Todos los transistores

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BTB1184J3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTB1184J3

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 80 MHz

Capacitancia de salida (Cc): 35 pF

Ganancia de corriente contínua (hfe): 180

Empaquetado / Estuche: TO252

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BTB1184J3 Datasheet (PDF)

1.1. btb1184j3s.pdf Size:382K _upd

BTB1184J3
BTB1184J3

Spec. No. : C817J3 Issued Date : 2015.02.25 CYStech Electronics Corp. Revised Date : Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -50V IC -3A BTB1184J3S RCESAT 130mΩ Features • Low VCE(sat) • Excellent current gain characteristics • RoHS compliant and halogen-free package Symbol Outline BTB1184J3S TO-252(DPAK) B:Base C:Collector B C

1.2. btb1184j3.pdf Size:281K _cystek

BTB1184J3
BTB1184J3

Spec. No. : C817J3 Issued Date : 2003.04.18 CYStech Electronics Corp. Revised Date : 2010.12.08 Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -50V IC -3A BTB1184J3 RCESAT 130mΩ Features • Low VCE(sat) • Excellent current gain characteristics • Complementary to BTD1760J3 • RoHS compliant package Symbol Outline BTB1184J3 TO-252(DPAK) B:

4.1. btb1188am3.pdf Size:245K _cystek

BTB1184J3
BTB1184J3

Spec. No. : C812M3-A Issued Date : 2011.02.17 CYStech Electronics Corp. Revised Date : Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -40V IC -2A BTB1188AM3 RCESAT(typ) 0.22Ω Features • Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A • Excellent current gain characteristics • Complementary to BTD1766AM3 • Pb-free lead platin

4.2. btb1188m3r.pdf Size:246K _cystek

BTB1184J3
BTB1184J3

Spec. No. : C623M3 Issued Date : 2003.05.25 CYStech Electronics Corp. Revised Date : 2013.08.12 Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V IC -2A BTB1188M3R RCESAT(typ) 0.22Ω Features • Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A • Excellent current gain characteristics • Complementary to BTD1766M3 • Pb-free lead

4.3. btb1188m3.pdf Size:207K _cystek

BTB1184J3
BTB1184J3

Spec. No. : C812M3 Issued Date : 2003.05.25 CYStech Electronics Corp. Revised Date :2013.08.12 Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V IC -2A BTB1188M3 RCESAT(typ) 0.22Ω Features • Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A • Excellent current gain characteristics • Complementary to BTD1766M3 • Pb-free lead

Otros transistores... BTB772J3 , BTB772ST3 , BTB772T3 , BTB818AG6 , BTB818N6 , BTB826M3 , BTB857AD3 , BTB857D3 , 2SC828 , BTB1188AM3 , BTB1188M3 , BTB1188M3R , BTB1197N3 , BTB1198A3 , BTB1198K3 , BTB1198M3 , BTB1198N3 .

 


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Introduzca al menos 1 números o letras