All Transistors. BTB1184J3 Datasheet

 

BTB1184J3 Datasheet and Replacement


   Type Designator: BTB1184J3
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 35 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: TO252
 

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BTB1184J3 Datasheet (PDF)

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 btb1184j3.pdf pdf_icon

BTB1184J3

Spec. No. : C817J3 Issued Date : 2003.04.18 CYStech Electronics Corp.Revised Date : 2010.12.08 Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -50VIC -3ABTB1184J3 RCESAT 130m Features Low VCE(sat) Excellent current gain characteristics Complementary to BTD1760J3 RoHS compliant package Symbol Outline BTB1184J3 TO-252(DPAK) B

 0.1. Size:382K  cystek
 btb1184j3s.pdf pdf_icon

BTB1184J3

Spec. No. : C817J3 Issued Date : 2015.02.25 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -50VIC -3ABTB1184J3S RCESAT 130m Features Low VCE(sat) Excellent current gain characteristics RoHS compliant and halogen-free package Symbol Outline BTB1184J3S TO-252(DPAK) BBase CCollector B C

 8.1. Size:246K  cystek
 btb1188m3r.pdf pdf_icon

BTB1184J3

Spec. No. : C623M3 Issued Date : 2003.05.25 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30VIC -2ABTB1188M3R RCESAT(typ) 0.22 Features Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A Excellent current gain characteristics Complementary to BTD1766M3 Pb-free lead

 8.2. Size:245K  cystek
 btb1188am3.pdf pdf_icon

BTB1184J3

Spec. No. : C812M3-A Issued Date : 2011.02.17 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -40VIC -2ABTB1188AM3 RCESAT(typ) 0.22 Features Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A Excellent current gain characteristics Complementary to BTD1766AM3 Pb-free lead platin

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Datasheet: BTB772J3 , BTB772ST3 , BTB772T3 , BTB818AG6 , BTB818N6 , BTB826M3 , BTB857AD3 , BTB857D3 , 2SC2240 , BTB1188AM3 , BTB1188M3 , BTB1188M3R , BTB1197N3 , BTB1198A3 , BTB1198K3 , BTB1198M3 , BTB1198N3 .

Keywords - BTB1184J3 transistor datasheet

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