BTB1197N3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTB1197N3

Código: AH

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 32 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 12 pF

Ganancia de corriente contínua (hFE): 180

Encapsulados: SOT23

 Búsqueda de reemplazo de BTB1197N3

- Selecciónⓘ de transistores por parámetros

 

BTB1197N3 datasheet

 ..1. Size:263K  cystek
 btb1197n3.pdf pdf_icon

BTB1197N3

Spec. No. C314N3 Issued Date 2005.04.20 CYStech Electronics Corp. Revised Date Page No. 1/ 5 Low Saturation PNP Epitaxial Planar Transistor BTB1197N3 Description The BTB1197N3 is designed with high current gain and low saturation voltage with collector current up to 1A continuous. Features Low VCE(SAT) , VCE(SAT) -0.3V (I / I =-1A/-100mA) C B Large col

 8.1. Size:258K  cystek
 btb1198a3.pdf pdf_icon

BTB1197N3

Spec. No. C824A3 Issued Date 2007.02.28 CYStech Electronics Corp. Revised Date 2012.12.27 Page No. 1/7 PNP Epitaxial Planar Transistor BTB1198A3 Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1768A3 Pb-free lead plating and halogen-free package Symbol Outline

 8.2. Size:274K  cystek
 btb1198n3.pdf pdf_icon

BTB1197N3

Spec. No. C824N3 Issued Date 2006.06.06 CYStech Electronics Corp. Revised Date 2013.12.13 Page No. 1/7 PNP Epitaxial Planar Transistor BVCEO -80V IC -1A BTB1198N3 RCE(SAT) 320m (typ.) Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1782N3 Pb-free and Halogen-f

 8.3. Size:291K  cystek
 btb1198k3.pdf pdf_icon

BTB1197N3

Spec. No. C824K3 Issued Date 2008.10.31 CYStech Electronics Corp. Revised Date 2013.10.09 Page No. 1/7 PNP Epitaxial Planar Transistor BTB1198K3 Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-100V CEO Complementary to BTD1768K3 Pb-free lead plating and halogen-free package Symbol Outline

MOSTRAR MÁS

Otros transistores... BTB818N6, BTB826M3, BTB857AD3, BTB857D3, BTB1184J3, BTB1188AM3, BTB1188M3, BTB1188M3R, 2SC2383, BTB1198A3, BTB1198K3, BTB1198M3, BTB1198N3, BTB1199M3, BTB1205I3, BTB1216J3, BTB1236A3