BTB1197N3 Specs and Replacement

Type Designator: BTB1197N3

SMD Transistor Code: AH

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 32 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: SOT23

 BTB1197N3 Substitution

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BTB1197N3 datasheet

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BTB1197N3

Spec. No. C314N3 Issued Date 2005.04.20 CYStech Electronics Corp. Revised Date Page No. 1/ 5 Low Saturation PNP Epitaxial Planar Transistor BTB1197N3 Description The BTB1197N3 is designed with high current gain and low saturation voltage with collector current up to 1A continuous. Features Low VCE(SAT) , VCE(SAT) -0.3V (I / I =-1A/-100mA) C B Large col... See More ⇒

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BTB1197N3

Spec. No. C824A3 Issued Date 2007.02.28 CYStech Electronics Corp. Revised Date 2012.12.27 Page No. 1/7 PNP Epitaxial Planar Transistor BTB1198A3 Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1768A3 Pb-free lead plating and halogen-free package Symbol Outline ... See More ⇒

 8.2. Size:274K  cystek

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BTB1197N3

Spec. No. C824N3 Issued Date 2006.06.06 CYStech Electronics Corp. Revised Date 2013.12.13 Page No. 1/7 PNP Epitaxial Planar Transistor BVCEO -80V IC -1A BTB1198N3 RCE(SAT) 320m (typ.) Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1782N3 Pb-free and Halogen-f... See More ⇒

 8.3. Size:291K  cystek

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BTB1197N3

Spec. No. C824K3 Issued Date 2008.10.31 CYStech Electronics Corp. Revised Date 2013.10.09 Page No. 1/7 PNP Epitaxial Planar Transistor BTB1198K3 Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-100V CEO Complementary to BTD1768K3 Pb-free lead plating and halogen-free package Symbol Outline ... See More ⇒

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Detailed specifications: BTB818N6, BTB826M3, BTB857AD3, BTB857D3, BTB1184J3, BTB1188AM3, BTB1188M3, BTB1188M3R, 2SC2383, BTB1198A3, BTB1198K3, BTB1198M3, BTB1198N3, BTB1199M3, BTB1205I3, BTB1216J3, BTB1236A3

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