BTB1199M3 Todos los transistores

 

BTB1199M3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BTB1199M3
   Código: BA
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 19 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT89
 

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BTB1199M3 datasheet

 ..1. Size:258K  cystek
btb1199m3.pdf pdf_icon

BTB1199M3

Spec. No. C315M3-A Issued Date 2008.06.04 CYStech Electronics Corp. Revised Date 2013.08.05 Page No. 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB1199M3 Features Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA Pb-free package Symbol Outline BTB1199M3 SOT-89 B Base B C E C Collector E Emitter Absolute Maximum Ratings

 8.1. Size:263K  cystek
btb1197n3.pdf pdf_icon

BTB1199M3

Spec. No. C314N3 Issued Date 2005.04.20 CYStech Electronics Corp. Revised Date Page No. 1/ 5 Low Saturation PNP Epitaxial Planar Transistor BTB1197N3 Description The BTB1197N3 is designed with high current gain and low saturation voltage with collector current up to 1A continuous. Features Low VCE(SAT) , VCE(SAT) -0.3V (I / I =-1A/-100mA) C B Large col

 8.2. Size:258K  cystek
btb1198a3.pdf pdf_icon

BTB1199M3

Spec. No. C824A3 Issued Date 2007.02.28 CYStech Electronics Corp. Revised Date 2012.12.27 Page No. 1/7 PNP Epitaxial Planar Transistor BTB1198A3 Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1768A3 Pb-free lead plating and halogen-free package Symbol Outline

 8.3. Size:274K  cystek
btb1198n3.pdf pdf_icon

BTB1199M3

Spec. No. C824N3 Issued Date 2006.06.06 CYStech Electronics Corp. Revised Date 2013.12.13 Page No. 1/7 PNP Epitaxial Planar Transistor BVCEO -80V IC -1A BTB1198N3 RCE(SAT) 320m (typ.) Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1782N3 Pb-free and Halogen-f

Otros transistores... BTB1188AM3 , BTB1188M3 , BTB1188M3R , BTB1197N3 , BTB1198A3 , BTB1198K3 , BTB1198M3 , BTB1198N3 , 2SC828 , BTB1205I3 , BTB1216J3 , BTB1236A3 , BTB1236AE3 , BTB1236AFP , BTB1236AI3 , BTB1236AJ3 , BTB1236AK3 .

 

 

 


 
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