BTB1199M3 - параметры, поиск аналогов, даташиты транзистора

BTB1199M3 Datasheet (PDF)

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Spec. No. : C315M3-A Issued Date : 2008.06.04 CYStech Electronics Corp.Revised Date : 2013.08.05 Page No. : 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB1199M3 Features Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA Pb-free package Symbol Outline BTB1199M3 SOT-89 BBase B C E CCollector EEmitter Absolute Maximum Ratings

8.1. Size:263K cystek
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Spec. No. : C314N3 Issued Date : 2005.04.20 CYStech Electronics Corp.Revised Date : Page No. : 1/ 5 Low Saturation PNP Epitaxial Planar Transistor BTB1197N3Description The BTB1197N3 is designed with high current gain and low saturation voltage with collector current up to 1A continuous. Features Low VCE(SAT) , VCE(SAT) -0.3V (I / I =-1A/-100mA) C B Large col

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Spec. No. : C824A3 Issued Date : 2007.02.28 CYStech Electronics Corp.Revised Date : 2012.12.27 Page No. : 1/7 PNP Epitaxial Planar Transistor BTB1198A3Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1768A3 Pb-free lead plating and halogen-free package Symbol Outline

8.3. Size:274K cystek
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Spec. No. : C824N3 Issued Date : 2006.06.06 CYStech Electronics Corp.Revised Date : 2013.12.13 Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -80VIC -1ABTB1198N3RCE(SAT) 320m(typ.) Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1782N3 Pb-free and Halogen-f