BTB1199M3 Specs and Replacement

Type Designator: BTB1199M3

SMD Transistor Code: BA

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 19 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT89

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BTB1199M3 datasheet

 ..1. Size:258K  cystek

btb1199m3.pdf pdf_icon

BTB1199M3

Spec. No. C315M3-A Issued Date 2008.06.04 CYStech Electronics Corp. Revised Date 2013.08.05 Page No. 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB1199M3 Features Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA Pb-free package Symbol Outline BTB1199M3 SOT-89 B Base B C E C Collector E Emitter Absolute Maximum Ratings... See More ⇒

 8.1. Size:263K  cystek

btb1197n3.pdf pdf_icon

BTB1199M3

Spec. No. C314N3 Issued Date 2005.04.20 CYStech Electronics Corp. Revised Date Page No. 1/ 5 Low Saturation PNP Epitaxial Planar Transistor BTB1197N3 Description The BTB1197N3 is designed with high current gain and low saturation voltage with collector current up to 1A continuous. Features Low VCE(SAT) , VCE(SAT) -0.3V (I / I =-1A/-100mA) C B Large col... See More ⇒

 8.2. Size:258K  cystek

btb1198a3.pdf pdf_icon

BTB1199M3

Spec. No. C824A3 Issued Date 2007.02.28 CYStech Electronics Corp. Revised Date 2012.12.27 Page No. 1/7 PNP Epitaxial Planar Transistor BTB1198A3 Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1768A3 Pb-free lead plating and halogen-free package Symbol Outline ... See More ⇒

 8.3. Size:274K  cystek

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BTB1199M3

Spec. No. C824N3 Issued Date 2006.06.06 CYStech Electronics Corp. Revised Date 2013.12.13 Page No. 1/7 PNP Epitaxial Planar Transistor BVCEO -80V IC -1A BTB1198N3 RCE(SAT) 320m (typ.) Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1782N3 Pb-free and Halogen-f... See More ⇒

Detailed specifications: BTB1188AM3, BTB1188M3, BTB1188M3R, BTB1197N3, BTB1198A3, BTB1198K3, BTB1198M3, BTB1198N3, 2SC828, BTB1205I3, BTB1216J3, BTB1236A3, BTB1236AE3, BTB1236AFP, BTB1236AI3, BTB1236AJ3, BTB1236AK3

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