BTB1424N3
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTB1424N3
Código: AE
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 240
MHz
Capacitancia de salida (Cc): 25
pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar BTB1424N3
BTB1424N3
Datasheet (PDF)
..1. Size:310K cystek
btb1424n3.pdf 
Spec. No. : C817N3-R Issued Date : 2003.04.03 CYStech Electronics Corp.Revised Date :2013.03.04 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB1424N3RCESAT(typ.) 0.125 Features Excellent DC current gain characteristics Low Saturation Voltage V =-0.25V(typ)(I =-2A, I =-100mA). CE(sat) C B Complementary to BTD2150N3
7.1. Size:229K cystek
btb1424at3.pdf
Spec. No. : C817T3 Issued Date : 2005.10.20 CYStech Electronics Corp.Revised Date :2014.02.17 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1424AT3 Features Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.1A Excellent current gain characteristics Complementary to BTD2150AT3 Pb-free lead plating package Symbol Outline BTB1424AT3 TO-12
7.2. Size:217K cystek
btb1424a3.pdf
Spec. No. : C817A3-R Issued Date : 2006.05.30 CYStech Electronics Corp. Revised Date:2008.04.24 Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1424A3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD2150A3 Pb-free package Symbol Outline BTB1424A3 TO-92 BBase CCo
7.3. Size:216K cystek
btb1424ad3.pdf
Spec. No. : C817D3 Issued Date : 2005.05.16 CYStech Electronics Corp.Revised Date :2011.08.15 Page No. : 1/5 Low V PNP Epitaxial Planar Transistor CE(sat)BTB1424AD3Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.3V(typ) @I =-2A, I =-100mA. CE(sat) C B Complementary to BTD2150AD3 Pb-free lead plating package Symbol Outl
7.4. Size:247K cystek
btb1424am3.pdf
Spec. No. : C817M3 Issued Date : 2007.01.10 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/7 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB1424AM3RCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.12V(typ) @I =-1A, I =-50mA. CE(sat) C B Complementary to BTD2150AM3 P
7.5. Size:243K cystek
btb1424l3.pdf
Spec. No. : C817L3 Issued Date : 2003.07.31 CYStech Electronics Corp.Revised Date :2011.02.25 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB1424L3RCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage V (sat)=-0.24V(typ) (I =-2A, I =-100mA). CE C BComplementary to BTD2150L3 P
7.6. Size:231K cystek
btb1424fp.pdf
Spec. No. : C817FP Issued Date : 2011.01.13 CYStech Electronics Corp.Revised Date : 2011.09.14 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -60VIC -3ABTB1424FPRCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.12V(typ) @I =-1A, I =-50mA. CE(sat) C B Complementary to BTD2150FP Pb-
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