BTB1424N3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTB1424N3
SMD Transistor Code: AE
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 240 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SOT23
BTB1424N3 Transistor Equivalent Substitute - Cross-Reference Search
BTB1424N3 Datasheet (PDF)
btb1424n3.pdf
Spec. No. : C817N3-R Issued Date : 2003.04.03 CYStech Electronics Corp.Revised Date :2013.03.04 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB1424N3RCESAT(typ.) 0.125 Features Excellent DC current gain characteristics Low Saturation Voltage V =-0.25V(typ)(I =-2A, I =-100mA). CE(sat) C B Complementary to BTD2150N3
btb1424at3.pdf
Spec. No. : C817T3 Issued Date : 2005.10.20 CYStech Electronics Corp.Revised Date :2014.02.17 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1424AT3 Features Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.1A Excellent current gain characteristics Complementary to BTD2150AT3 Pb-free lead plating package Symbol Outline BTB1424AT3 TO-12
btb1424a3.pdf
Spec. No. : C817A3-R Issued Date : 2006.05.30 CYStech Electronics Corp. Revised Date:2008.04.24 Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1424A3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD2150A3 Pb-free package Symbol Outline BTB1424A3 TO-92 BBase CCo
btb1424ad3.pdf
Spec. No. : C817D3 Issued Date : 2005.05.16 CYStech Electronics Corp.Revised Date :2011.08.15 Page No. : 1/5 Low V PNP Epitaxial Planar Transistor CE(sat)BTB1424AD3Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.3V(typ) @I =-2A, I =-100mA. CE(sat) C B Complementary to BTD2150AD3 Pb-free lead plating package Symbol Outl
btb1424am3.pdf
Spec. No. : C817M3 Issued Date : 2007.01.10 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/7 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB1424AM3RCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.12V(typ) @I =-1A, I =-50mA. CE(sat) C B Complementary to BTD2150AM3 P
btb1424l3.pdf
Spec. No. : C817L3 Issued Date : 2003.07.31 CYStech Electronics Corp.Revised Date :2011.02.25 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB1424L3RCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage V (sat)=-0.24V(typ) (I =-2A, I =-100mA). CE C BComplementary to BTD2150L3 P
btb1424fp.pdf
Spec. No. : C817FP Issued Date : 2011.01.13 CYStech Electronics Corp.Revised Date : 2011.09.14 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -60VIC -3ABTB1424FPRCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.12V(typ) @I =-1A, I =-50mA. CE(sat) C B Complementary to BTD2150FP Pb-
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
