BTC2411S3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTC2411S3

Código: P1

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 75 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 230 MHz

Capacitancia de salida (Cc): 8.3 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT323

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BTC2411S3 datasheet

 ..1. Size:271K  cystek
 btc2411s3.pdf pdf_icon

BTC2411S3

Spec. No. C203S3-R Issued Date 2003.11.18 CYStech Electronics Corp. Revised Date 2010.11.12 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411S3 Description The BTC2411S3 is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Low V CE(sat

 7.1. Size:283K  cystek
 btc2411n3.pdf pdf_icon

BTC2411S3

Spec. No. C203N3 Issued Date 2002.05.11 CYStech Electronics Corp. Revised Date 2013.09.25 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411N3 Description The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/

 7.2. Size:265K  cystek
 btc2411l3.pdf pdf_icon

BTC2411S3

Spec. No. C203L3 Issued Date 2005.02.22 CYStech Electronics Corp. Revised Date 2010.11.12 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411L3 Description The BTC2411L3 is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/

 7.3. Size:284K  cystek
 btc2411n3g.pdf pdf_icon

BTC2411S3

Spec. No. C203N3G Issued Date 2008.12.26 CYStech Electronics Corp. Revised Date Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTC2411N3G Description The BTC2411N3G is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.4V at I /I = 500mA/50mA.

MOSTRAR MÁS

Otros transistores... BTC2030N3, BTC2059A3, BTC2059N3, BTC2383A3, BTC2383K3, BTC2411L3, BTC2411N3, BTC2411N3G, A940, BTC2412N3, BTC2655K3, BTC2655S3, BTC2880A3, BTC2880M3, BTC2880M3G, BTC2881E3, BTC2881FP