All Transistors. BTC2411S3 Datasheet

 

BTC2411S3 Datasheet and Replacement


   Type Designator: BTC2411S3
   SMD Transistor Code: P1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 230 MHz
   Collector Capacitance (Cc): 8.3 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT323
 

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BTC2411S3 Datasheet (PDF)

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 btc2411s3.pdf pdf_icon

BTC2411S3

Spec. No. : C203S3-R Issued Date : 2003.11.18 CYStech Electronics Corp.Revised Date : 2010.11.12 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411S3Description The BTC2411S3 is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Low V CE(sat

 7.1. Size:283K  cystek
 btc2411n3.pdf pdf_icon

BTC2411S3

Spec. No. : C203N3 Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2013.09.25 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411N3Description The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/

 7.2. Size:265K  cystek
 btc2411l3.pdf pdf_icon

BTC2411S3

Spec. No. : C203L3 Issued Date : 2005.02.22 CYStech Electronics Corp.Revised Date : 2010.11.12 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411L3Description The BTC2411L3 is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/

 7.3. Size:284K  cystek
 btc2411n3g.pdf pdf_icon

BTC2411S3

Spec. No. : C203N3G Issued Date : 2008.12.26 CYStech Electronics Corp.Revised Date : Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTC2411N3GDescription The BTC2411N3G is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.4V at I /I = 500mA/50mA.

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Datasheet: BTC2030N3 , BTC2059A3 , BTC2059N3 , BTC2383A3 , BTC2383K3 , BTC2411L3 , BTC2411N3 , BTC2411N3G , B772 , BTC2412N3 , BTC2655K3 , BTC2655S3 , BTC2880A3 , BTC2880M3 , BTC2880M3G , BTC2881E3 , BTC2881FP .

History: 2SC1030A | OC831 | MP1552A | DTA115T | 2T6831 | BUH2M20AP | 2T7067A

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