BTC2881J3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTC2881J3

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hFE): 160

Encapsulados: TO252

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BTC2881J3 datasheet

 ..1. Size:285K  cystek
 btc2881j3.pdf pdf_icon

BTC2881J3

Spec. No. C316J3 Issued Date 2009.11.17 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200V BTC2881J3 IC 1A RCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating a

 7.1. Size:236K  cystek
 btc2881m3.pdf pdf_icon

BTC2881J3

Spec. No. C316M3 Issued Date 2007.03.28 CYStech Electronics Corp. Revised Date 2013.08.07 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 200V BTC2881M3 IC 1A RCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTA120

 7.2. Size:273K  cystek
 btc2881l3.pdf pdf_icon

BTC2881J3

Spec. No. C316L3 Issued Date 2010.12.29 CYStech Electronics Corp. Revised Date 2011.01.03 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200V BTC2881L3 IC 1A RCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating an

 7.3. Size:225K  cystek
 btc2881e3.pdf pdf_icon

BTC2881J3

Spec. No. C316E3 Issued Date 2010.01.22 CYStech Electronics Corp. Revised Date 2010.09.28 Page No. 1/5 Silicon NPN Epitaxial Planar Transistor BVCEO 200V BTC2881E3 IC 1A RCESAT(MAX) 0.86 Description High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant package Sy

MOSTRAR MÁS

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