BTC2881J3 Specs and Replacement

Type Designator: BTC2881J3

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TO252

 BTC2881J3 Substitution

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BTC2881J3 datasheet

 ..1. Size:285K  cystek

 btc2881j3.pdf pdf_icon

BTC2881J3

Spec. No. C316J3 Issued Date 2009.11.17 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200V BTC2881J3 IC 1A RCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating a... See More ⇒

 7.1. Size:236K  cystek

 btc2881m3.pdf pdf_icon

BTC2881J3

Spec. No. C316M3 Issued Date 2007.03.28 CYStech Electronics Corp. Revised Date 2013.08.07 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 200V BTC2881M3 IC 1A RCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTA120... See More ⇒

 7.2. Size:273K  cystek

 btc2881l3.pdf pdf_icon

BTC2881J3

Spec. No. C316L3 Issued Date 2010.12.29 CYStech Electronics Corp. Revised Date 2011.01.03 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200V BTC2881L3 IC 1A RCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating an... See More ⇒

 7.3. Size:225K  cystek

 btc2881e3.pdf pdf_icon

BTC2881J3

Spec. No. C316E3 Issued Date 2010.01.22 CYStech Electronics Corp. Revised Date 2010.09.28 Page No. 1/5 Silicon NPN Epitaxial Planar Transistor BVCEO 200V BTC2881E3 IC 1A RCESAT(MAX) 0.86 Description High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant package Sy... See More ⇒

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Detailed specifications: BTC2412N3, BTC2655K3, BTC2655S3, BTC2880A3, BTC2880M3, BTC2880M3G, BTC2881E3, BTC2881FP, TIP127, BTC2881L3, BTC2881M3, BTC2882J3, BTC2883J3, BTC3097T3, BTC3149E3, BTC3356N3, BTC3415A3

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