BTC2881J3 - параметры, поиск аналогов, даташиты транзистора

BTC2881J3 Datasheet (PDF)

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Spec. No. : C316J3 Issued Date : 2009.11.17 CYStech Electronics Corp.Revised Date : 2010.12.08 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881J3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating a

7.1. Size:236K cystek
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Spec. No. : C316M3 Issued Date : 2007.03.28 CYStech Electronics Corp.Revised Date : 2013.08.07 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881M3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTA120

7.2. Size:273K cystek
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Spec. No. : C316L3 Issued Date : 2010.12.29 CYStech Electronics Corp.Revised Date : 2011.01.03 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 200VBTC2881L3IC 1ARCESAT(MAX) 0.86 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating an

7.3. Size:225K cystek
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Spec. No. : C316E3 Issued Date : 2010.01.22 CYStech Electronics Corp.Revised Date : 2010.09.28 Page No. : 1/5 Silicon NPN Epitaxial Planar Transistor BVCEO 200VBTC2881E3IC 1ARCESAT(MAX) 0.86 Description High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage RoHS compliant package Sy