BTC5706J3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTC5706J3
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 400 MHz
Capacitancia de salida (Cc): 15 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: TO252
Búsqueda de reemplazo de transistor bipolar BTC5706J3
BTC5706J3 Datasheet (PDF)
btc5706j3.pdf
Spec. No. : C819J3 Issued Date : 2004.12.18 CYStech Electronics Corp. Revised Date : Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706J3 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability Applications DC-DC converter, relay drivers, lamp drivers, motor
btc5706i3.pdf
Spec. No. : C819I3 Issued Date : 2004.12.16 CYStech Electronics Corp.Revised Date :2011.11.18 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTC5706I3 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability RoHS compliant package Applications DC-DC converter
btc5706a3.pdf
Spec. No. : C819A3 Issued Date : 2006.06.06 CYStech Electronics Corp.Revised Date : Page No. : 1/ 5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706A3 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability Pb-free package Applications DC-DC converter, relay drivers,
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
