BTC5706J3 Specs and Replacement
Type Designator: BTC5706J3
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TO252
BTC5706J3 Substitution
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BTC5706J3 datasheet
Spec. No. C819J3 Issued Date 2004.12.18 CYStech Electronics Corp. Revised Date Page No. 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706J3 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability Applications DC-DC converter, relay drivers, lamp drivers, motor ... See More ⇒
Spec. No. C819I3 Issued Date 2004.12.16 CYStech Electronics Corp. Revised Date 2011.11.18 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTC5706I3 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability RoHS compliant package Applications DC-DC converter... See More ⇒
Spec. No. C819A3 Issued Date 2006.06.06 CYStech Electronics Corp. Revised Date Page No. 1/ 5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706A3 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability Pb-free package Applications DC-DC converter, relay drivers,... See More ⇒
Detailed specifications: BTC4672M3, BTC5094N3, BTC5095S3, BTC5103I3, BTC5181WC3, BTC5658Y3, BTC5706A3, BTC5706I3, MPSA42, BTC9013A3, BTC9014A3, BTD142F3, BTD882AM3, BTD882D3, BTD882I3, BTD882J3, BTD882SA3
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