BTC5706J3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTC5706J3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO252
BTC5706J3 Transistor Equivalent Substitute - Cross-Reference Search
BTC5706J3 Datasheet (PDF)
btc5706j3.pdf
Spec. No. : C819J3 Issued Date : 2004.12.18 CYStech Electronics Corp. Revised Date : Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706J3 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability Applications DC-DC converter, relay drivers, lamp drivers, motor
btc5706i3.pdf
Spec. No. : C819I3 Issued Date : 2004.12.16 CYStech Electronics Corp.Revised Date :2011.11.18 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTC5706I3 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability RoHS compliant package Applications DC-DC converter
btc5706a3.pdf
Spec. No. : C819A3 Issued Date : 2006.06.06 CYStech Electronics Corp.Revised Date : Page No. : 1/ 5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706A3 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability Pb-free package Applications DC-DC converter, relay drivers,
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
