BTD882T3 Todos los transistores

 

BTD882T3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTD882T3

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 90 MHz

Capacitancia de salida (Cc): 45 pF

Ganancia de corriente contínua (hFE): 180

Encapsulados: TO126

 Búsqueda de reemplazo de BTD882T3

- Selecciónⓘ de transistores por parámetros

 

BTD882T3 datasheet

 ..1. Size:320K  cystek
btd882t3.pdf pdf_icon

BTD882T3

Spec. No. C848T3-H Issued Date 2002.08.18 CYStech Electronics Corp. Revised Date 2014.03.17 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882T3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772T3 Pb-free package Symbol Out

 8.1. Size:302K  cystek
btd882j3.pdf pdf_icon

BTD882T3

Spec. No. C848J3-H Issued Date 2003.04.02 CYStech Electronics Corp. Revised Date 2013.03.12 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD882J3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772J3 Pb-free package Symbol Outli

 8.2. Size:246K  cystek
btd882am3.pdf pdf_icon

BTD882T3

Spec. No. C848M3-H Issued Date 2003.06.17 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/7 Low V NPN Epitaxial Planar Transistor CE(sat) BVCEO 50V IC 3A BTD882AM3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772AM3 Pb-free lead plating p

 8.3. Size:249K  cystek
btd882st3.pdf pdf_icon

BTD882T3

Spec. No. C858T3 Issued Date 2011.06.28 CYStech Electronics Corp. Revised Date Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882ST3 RCESAT(typ) 150m Features Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772ST3 Pb-free lead plating package Symbol Outline

Otros transistores... BTC9014A3 , BTD142F3 , BTD882AM3 , BTD882D3 , BTD882I3 , BTD882J3 , BTD882SA3 , BTD882ST3 , A42 , BTD965A3 , BTD965LA3 , BTD965N3 , BTD1304A3 , BTD1304N3 , BTD1383L3 , BTD1383M3 , BTD1616AA3 .

History: GT905B | FMMT3904 | BDW23B

 

 

 


History: GT905B | FMMT3904 | BDW23B

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

 

 

 

Popular searches

6426 mosfet | b1565 | nce82h140 | 2n2369 equivalent | 2sd313 datasheet | k8a50d datasheet | 2sc381 | datasheet mosfet

 

 

↑ Back to Top
.