BTD882T3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTD882T3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TO126
BTD882T3 Transistor Equivalent Substitute - Cross-Reference Search
BTD882T3 Datasheet (PDF)
btd882t3.pdf
Spec. No. : C848T3-H Issued Date : 2002.08.18 CYStech Electronics Corp.Revised Date : 2014.03.17 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30VIC 3ABTD882T3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772T3 Pb-free package Symbol Out
btd882j3.pdf
Spec. No. : C848J3-H Issued Date : 2003.04.02 CYStech Electronics Corp.Revised Date :2013.03.12 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar TransistorBVCEO 50VIC 3ABTD882J3RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772J3 Pb-free package Symbol Outli
btd882am3.pdf
Spec. No. : C848M3-H Issued Date : 2003.06.17 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/7 Low V NPN Epitaxial Planar Transistor CE(sat)BVCEO 50VIC 3ABTD882AM3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772AM3 Pb-free lead plating p
btd882st3.pdf
Spec. No. : C858T3 Issued Date : 2011.06.28 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30VIC 3ABTD882ST3 RCESAT(typ) 150m Features Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772ST3 Pb-free lead plating package Symbol Outline
btd882d3.pdf
Spec. No. : C848D3-H Issued Date : 2005.05.04 CYStech Electronics Corp.Revised Date :2006.04.21 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA Excellent current gain characteristics Complementary to BTB772D3 Pb-free package Symbol Outline BTD882D3 TO-126ML B
btd882sa3.pdf
Spec. No. : C848A3-H Issued Date : 2003.05.31 CYStech Electronics Corp.Revised Date :2013.03.21 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD882SA3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772SA3 Pb-free lead plating and h
btd882i3.pdf
Spec. No. : C848I3-H Issued Date : 2003.04.02 CYStech Electronics Corp.Revised Date : 2010.11.05 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3ABTD882I3 RCESAT 125m typ.Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772I3 RoHS compliant package Symb
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
