Биполярный транзистор BTD882T3 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BTD882T3
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 90 MHz
Ёмкость коллекторного перехода (Cc): 45 pf
Статический коэффициент передачи тока (hfe): 180
Корпус транзистора: TO126
BTD882T3 Datasheet (PDF)
btd882t3.pdf
Spec. No. : C848T3-H Issued Date : 2002.08.18 CYStech Electronics Corp.Revised Date : 2014.03.17 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30VIC 3ABTD882T3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772T3 Pb-free package Symbol Out
btd882j3.pdf
Spec. No. : C848J3-H Issued Date : 2003.04.02 CYStech Electronics Corp.Revised Date :2013.03.12 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar TransistorBVCEO 50VIC 3ABTD882J3RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772J3 Pb-free package Symbol Outli
btd882am3.pdf
Spec. No. : C848M3-H Issued Date : 2003.06.17 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/7 Low V NPN Epitaxial Planar Transistor CE(sat)BVCEO 50VIC 3ABTD882AM3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772AM3 Pb-free lead plating p
btd882st3.pdf
Spec. No. : C858T3 Issued Date : 2011.06.28 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30VIC 3ABTD882ST3 RCESAT(typ) 150m Features Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772ST3 Pb-free lead plating package Symbol Outline
btd882d3.pdf
Spec. No. : C848D3-H Issued Date : 2005.05.04 CYStech Electronics Corp.Revised Date :2006.04.21 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA Excellent current gain characteristics Complementary to BTB772D3 Pb-free package Symbol Outline BTD882D3 TO-126ML B
btd882sa3.pdf
Spec. No. : C848A3-H Issued Date : 2003.05.31 CYStech Electronics Corp.Revised Date :2013.03.21 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD882SA3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772SA3 Pb-free lead plating and h
btd882i3.pdf
Spec. No. : C848I3-H Issued Date : 2003.04.02 CYStech Electronics Corp.Revised Date : 2010.11.05 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3ABTD882I3 RCESAT 125m typ.Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772I3 RoHS compliant package Symb
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050